High performance field emission properties of graphite nanoplatelet field emitters

Applied Physics Letters

Volumn 103, Issue 7, 2013, Pages

  Song, Yenan ^a   Hoon Shin, Dong ^a   Song, Yoon Ho ^b   Saito, Yahachi ^c   Jin Lee, Cheol ^a  

^a Korea University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON FIELD EMISSION; FIELD EMISSION APPLICATION; FIELD EMISSION PROPERTY; GRAPHITE NANOPLATELETS; HIGH EMISSION CURRENT; LONG TERM STABILITY; SCREEN PRINTING METHODS; THRESHOLD ELECTRIC FIELDS;

ASPECT RATIO; DEGRADATION; ELECTRIC FIELDS; GRAPHITE;

GRAPHENE;

EID: 84882412187     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818892     Document Type: Article

References (24)

1. P. Delhaes, Graphite and Precursors (Gordon and Breach, Australia, 2001).
2. S. M. Wang, H. W. Tian, Q. N. Meng, C. M. Zhao, L. Qiao, Y. F. Bing, C. Q. Hu, W. T. Zheng, and Y. C. Liu, Appl. Surf. Sci. 258, 6930 (2012). 10.1016/j.apsusc.2012.03.137
3. H. Yamaguchi, K. Murakami, G. Eda, T. Fujita, P. Guan, W. Wang, C. Gong, J. Boisse, S. Miller, M. Acik, K. Cho, Y. J. Chabal, M. Chen, F. Wakaya, M. Takai, and M. Chhowalla, ACS Nano 5, 4945 (2011). 10.1021/nn201043a
4. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
5. Z.-S. Wu, S. Pei, W. Ren, D. Tang, L. Gao, B. Liu, F. Li, C. Liu, and H.-M. Cheng, Adv. Mater. 21, 1756 (2009). 10.1002/adma.200802560
6. G. Eda, H. E. Unalan, N. Rupesinghe, G. A. J. Amaratunga, and M. Chhowalla, Appl. Phys. Lett. 93, 233502 (2008). 10.1063/1.3028339
7. Q. Huang, G. Wang, L. Guo, Y. Jia, J. Lin, K. Li, W. Wang, and X. Chen, Small 7, 450 (2011). 10.1002/smll.201001502
8. H. H. Busta, R. J. Espinosa, and A. Silzar, Solid-State Electron. 45, 1039 (2001). 10.1016/S0038-1101(00)00220-3
9. J. J. Wang, M. Y. Zhu, R. A. Outlaw, and B. C. Holloway, Appl. Phys. Lett. 85, 1265 (2004). 10.1063/1.1782253
10. V. A. Krivchenko, A. A. Pilevsky, A. T. Rakhimov, B. V. Seleznev, N. V. Suetin, M. A. Timofeyev, A. V. Bespalov, and O. L. Golikova, J. Appl. Phys. 107, 014315 (2010). 10.1063/1.3277054
11. T. Wei, Z. Fan, G. Luo, S. Wang, and L. Song, Mater. Res. Bull. 44, 977 (2009). 10.1016/j.materresbull.2008.11.010
12. L. M. Viculis, J. J. Mack, and R. B. Kaner, Science 28, 1361 (2003). 10.1126/science.1078842
13. S. Reich and C. Thomsen, Philos. Trans. R. Soc. London A 362, 2271 (2004). 10.1098/rsta.2004.1454
14. F. Tuinstra and J. L. Koenig, J. Chem. Phys. 53, 1126 (1970). 10.1063/1.1674108
15. A. Malesevic, R. Kemps, A. Vanhulsel, M. P. Chowdhury, A. Volodin, and C. Van Haesendonck, J. Appl. Phys. 104, 084301 (2008). 10.1063/1.2999636
16. D. H. Lee, J. E. Kim, T. H. Han, J. W. Hwang, S. Jeon, S.-Y. Choi, S. H. Hong, W. J. Lee, R. S. Ruoff, and S. O. Kim, Adv. Mater. 22, 1247 (2010). 10.1002/adma.200903063
17. S. I. Jung, S. H. Jo, H. S. Moon, J. M. Kim, D.-S. Zang, and C. J. Lee, J. Phys. Chem. C 111, 4175 (2007). 10.1021/jp0676078
18. B. Ha, D. H. Shin, J. Park, and C. J. Lee, J. Phys. Chem. C 112, 430 (2008). 10.1021/jp0768468
19. M. Qian, T. Feng, H. Ding, L. Lin, H. Li, Y. Chen, and Z. Sun, Nanotechnology 20, 425702 (2009). 10.1088/0957-4484/20/42/425702
20. S. Fan, M. G. Chapline, N. R. Franklin, T. W. Tombler, A. M. Cassell, and H. Dai, Science 283, 512 (1999). 10.1126/science.283.5401.512
21. R. H. Fowler and L. Nordheim, Proc. R. Soc. London, Ser. A 119, 173 (1928). 10.1098/rspa.1928.0091
22. J. W. Gadzuk and E. W. Plummer, Rev. Mod. Phys. 45, 487 (1973). 10.1103/RevModPhys.45.487
23. J. Yu, J. Chen, S. Z. Deng, and N. S. Xu, J. Vac. Sci. Technol. B 25, 552 (2007). 10.1116/1.2429666
24. J. B. Liu, J. Chen, N. S. Xu, S. Z. Deng, and J. C. She, Ultramicroscopy 109, 390 (2009). 10.1016/j.ultramic.2008.11.001