Electromigration reliability

Design of High-Performance Microprocessor Circuits

Volumn , Issue , 2000, Pages 429-448

  Clement, J Joseph ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Aluminum; Dielectrics; Electromigration; Integrated circuit interconnections; Materials; Reliability

Indexed keywords

ALUMINUM; DIELECTRIC MATERIALS; INTEGRATED CIRCUIT INTERCONNECTS; MATERIALS; RELIABILITY;

ELECTROMIGRATION RELIABILITY; INTEGRATED CIRCUIT INTERCONNECTIONS;

ELECTROMIGRATION;

EID: 84882388370     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1109/9780470544365.ch20     Document Type: Chapter

References (34)

1. I. A. Blech and H. Sello, “The Failure of Thin Aluminum Current-carrying Strips on Oxidized Silicon,” Physics of Failure in Electronics, vol. 5, USAF-RADC Series, p. 496-505, 1966.
2. J. R. Black, “Mass Transport of Aluminum by Momentum Exchange with Conducting Electrons,” Proc. Ieee Int. Rei. Phys. Symp., pp. 148-159, 1967.
3. I. Ames, F. M. D’Heurle, and R. E. Horstmann, “Reduction of Electromigration in Aluminum Films by Copper Doping,” IBM J. Res. Develop., vol. 14, pp. 461-463, July 1970.
4. J. R. Black, “Electromigration Failure Modes in Aluminum Metallization for Semiconductor Devices,” Proc. Ieee, vol. 57, pp. 1587-1594, Sept. 1969.
5. J. R. Lloyd and P. M. Smith, “The Effect of Passivation Thickness on the Electromigration Lifetime of Al/Cu Thin Film Conductors,” J. Vac. Sci. Technol., vol. A1, pp. 455-458, 1983.
6. F. G. Yost, D. E. Amos, and A. D. Romig, Jr., “Stress-Driven Diffusive Voiding of Aluminum Conductor Lines,” Proc. Ieee Int. Rel. Phys. Symp., pp. 193-201, 1989.
7. J. R. Lloyd, “Electromigration in Al-Cu Thin Films with Polyimide Passivation,” Thin Solid Films, vol. 91, pp. 175-182, 1982.
8. T. Usui, T. Watanabe, S. Ito, M. Hasunuma, M. Kawai, and H. Kaneko, “Significant Improvement in Electromigration of Reflow-sputtered Al-0.5wt%Cu/Nb-liner Dual Damascene Interconnects with Low-k Organic SOG Dielectric,” Proc. Ieee Int. Rel. Phys. Symp., pp. 221-226, 1999.
9. M. J. Attardo and R. Rosenberg, “Electromigration Damage in Aluminum Film Conductors,” J. Appl. Phys., vol. 41, pp. 2381-2386, May 1970.
10. B. N. Argarwala, M. J. Attardo, and A. J. Ingraham, “Dependence of Electromigration-induced Failure Time on Length and Width of Aluminum Thin-film Conductors,” J. Appl. Phys., vol. 41, pp. 3954-3960, Sep. 1970.
11. J. Cho and C. V. Thompson, “Grain Size Dependence of Electromigration-induced Failures in Narrow Interconnects,” Appl. Phys. Lett., vol. 54, pp. 2577-2579, June 19, 1989.
12. M. L. Dreyer, K. Y. Fu, and C. J. Varker, “The Effects of Temperature and Microstructure on the Components of Electromigration and Mass Transport,” Proc. Ieee Int. Rel. Phys. Symp. Pp. 304-310, 1993.
13. J. R. Lloyd and J. J. Clement, “Electromigration in Copper Conductors,” Thin Solid Films, vol. 262, pp. 135-141, 1995.
14. M. A. Korhonen, P. Borgesen, K. N. Tu, and C. -Y. Li, “Stress Evolution Due to Electromigration in Confined Metal Lines,” J. Appl. Phys., vol. 73, pp. 3790-3799, April 15, 1993.
15. J. J. Clement, “Reliability Analysis for Encapsulated Interconnect Lines under dc and Pulsed dc Current Using a Continuum Electromigration Transport Model,” J. Appl. Phys., vol. 82, pp. 5991-6000, Dec. 15, 1997.
16. I. A. Blech and C. Herring, “Stress Generation by Electromigration,” Appl. Phys. Lett., vol. 29, pp. 131-133, Aug. 1, 1976.
17. I. A. Blech and K. L. Tai, “Measurement of Stress Gradients Generated by Electromigration,” Appl. Phys. Lett., vol. 30, pp. 387-389, April 15, 1977.
18. R. G. Filippi, R. A. Wachnik, H. Aochi, J. R. Lloyd, and M. A. Korhonen, “The Effect of Current Density and Stripe Length on Resistance Saturation During Electromigration Testing,” Appl. Phys. Lett., vol. 69, pp. 2350-2352, Oct. 14, 1996.
19. P. Borgesen, M. A. Korhonen, D. D. Brown, C. -Y. Li, H. S. Rathore, and P. A. Totta, “Stress Evolution During Stress Migration and Electromigration in Passivated Interconnect Lines,” AIP Conf. Proceedings, vol. 305, pp. 231-253, 1994.
20. J. J. Clement, J. R. Lloyd, and C. V. Thompson, “Failure in Tungsten-filled via Structures,” Mat. Res. Soc. Symp. Proc., vol. 391, pp. 423-428, 1995.
21. J. M. Towner and E. P. Van de Ven, “Aluminum Electromigration under Pulsed dc Conditions,” Proc. Ieee Int. Rel. Phys. Symp., pp. 36-39, 1983.
22. J. A. Maiz, “Characterization of Electromigration under Bidirectional (BC) and Pulsed Unidirectional (PDC) Currents,” Proc. Ieee Int. Rel. Phys. Symp., pp. 220-228, 1989.
23. L. M. Ting, J. S. May, W. R. Hunter, and J. W. Mcpherson, “AC Electromigration Characterization and Modeling of Multilayered Interconnects,” Proc. Ieee Int. Rel. Phys. Symp., pp. 311-316, 1993.
24. J. R. Lloyd and R. H. Koch, “Study of Electromigration-induced Resistance and Resistance Decay in Al Thin Film Conductors,” Proc. Ieee Int. Rei. Phys. Symp., pp. 161-168, 1987.
25. I. A. Blech and E. S. Meieran, “Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films,” Appi. Phys. Lett., vol. 11, pp. 263-266, Oct. 15, 1967
26. I. A. Blech and E. S. Meieran, “Electromigration in Thin Al Films,” J. Appi. Phys., vol. 40, pp. 485-491, Feb. 1969.
27. P. B. Ghate, “Electromigration-induced Failures in VLSI Interconnects,” Proc. Ieee Int. Rei. Phys. Symp., pp. 292-299, 1982.
28. J. Kitchin, “Statistical Electromigration Budgeting for Reliable Design and Verification in a 300-MHz Microprocessor,” Proc. Symp. On VLSI Circuits, pp. 115-116, 1995.
29. R. H. Tu, E. Rosenbaum, W. Y. Chan, C. C. Li, E. Minami, K. Quader, P. K. Ko, and C. Hu, “Berkeley Reliability Tools—BERT,” IEEE Trans. Computer-Aided Design, vol. 12, pp. 1524-1534, Oct. 1993.
30. C. -C. Teng, Y. -K. Cheng, E. Rosenbaum, and S. -M. Kang, “iTEM: A Temperature-Dependent Electromigration Reliability Diagnosis Tool,” IEEE Trans. Computer-Aided Design, vol. 16, pp. 882-892, Aug. 1997.
31. S. Rochel, G. Steele, J. R. Lloyd, S. Z. Hussain, and D. Overhauser, “Full-Chip Reliability Analysis,” Proc. Ieee Int. Rei. Phys. Symp., pp. 356-362, 1998.
32. V. Peng, D. R. Donchin, and Y. T. Yen, “Design Methodology and CAD Tools for the NVAX Microprocessor,” Proc. Ieee Int. Conf. On Computer Design: VLSI in Computers and Microprocessors, pp. 310-313, 1992.
33. J. Wright and C. Edmondson, “Metal Migration Considerations in Signal Lines,” Proc. Ieee 1987 Custom Integrated Circuits Conf., pp. 594-597, 1987.
34. J. J. Clement, S. P. Riege, R. Cvijetic, and C. V. Thompson, “Methodology for Critical Threshold Design Rule Evaluation,” IEEE Trans. Computer-Aided Design, vol. 18, pp. 576-581, May 1998.