High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC

Applied Physics Letters

Volumn 103, Issue 5, 2013, Pages

  Iezhokin, I ^a   Offermans, P ^b   Brongersma, S H ^b   Giesbers, A J M ^a   Flipse, C F J ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b HOLST CENTRE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DIRAC POINT; ELECTRICAL RESPONSE; EPITAXIAL GRAPHENE; SAMPLE RESISTANCE; SIC SUBSTRATES; SURFACE DOPING;

GRAPHENE; NITROGEN OXIDES; SILICON CARBIDE;

EPITAXIAL GROWTH;

EID: 84882296438     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816762     Document Type: Article

References (28)

1. F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson, and K. S. Novoselov, Nat. Matter 6, 652 (2007). 10.1038/nmat1967
2. Y. Dan, Y. Lu, N. J. Kybert, Z. Luo, and A. T. C. Johnson, Nano Lett. 9, 1472 (2009). 10.1021/nl8033637
3. S. Rumyantsev, G. Liu, M. S. Shur, R. A. Potyrailo, and A. A. Balandin, Nano Lett. 12, 2294 (2012). 10.1021/nl3001293
4. G. Chen, T. M. Paronyan, and A. R. Harutyunyana, Appl. Phys. Lett. 101, 053119 (2012). 10.1063/1.4742327
5. A. K. Singh, M. A. Uddin, J. T. Tolson, H. Maire-Afeli, N. Sbrockey, G. S. Tompa, M. G. Spencer, T. Vogt, T. S. Sudarshan, and G. Koley, Appl. Phys. Lett. 102, 043101 (2013). 10.1063/1.4789509
6. G. Lu, S. Park, K. Yu, R. S. Ruoff, L. E. Ocola, D. Rosenmann, and J. Chen, ACS Nano 5, 1154 (2011). 10.1021/nn102803q
7. G. Lu, L. E. Ocola, and J. Chen, Appl. Phys. Lett. 94, 083111 (2009). 10.1063/1.3086896
8. I.-S. Kang, H.-M. So, G.-S. Bang, J.-H. Kwak, J.-O. Lee, and C. W. Ahn, Appl. Phys. Lett. 101, 123504 (2012). 10.1063/1.4753974
9. M. W. K. Nomani, R. Shishir, M. Qazi, D. Diwan, V. B. Shields, M. G. Spencer, G. S. Tompa, N. M. Sbrockey, and G. Koley, Sens. Actuators B 150, 301 (2010). 10.1016/j.snb.2010.06.069
10. R. Pearce, T. Iakimov, M. Andersson, L. Hultman, A. L. Spetz, and R. Yakimova, Sens. Actuators B 155, 451 (2011). 10.1016/j.snb.2010.12.046
11. R. K. Paul, S. Badhulika, N. M. Saucedo, and A. Mulchandani, Anal. Chem. 84, 8171 (2012). 10.1021/ac3012895
12. F. Yavari, Z. Chen, A. V. Thomas, W. Ren, H.-M. Cheng, and N. Koratkar, Sci. Rep. 1, 166 (2011). 10.1038/srep00166
13. K. Wetchakun, T. Samerjai, N. Tamaekong, C. Liewhiran, C. Siriwong, V. Kruefu, A. Wisitsoraat, A. Tuantranont, and S. Phanichphant, Sens. Actuators B 160, 580 (2011). 10.1016/j.snb.2011.08.032
14. T. Zhang, S. Mubeen, N. V. Myung, and M. A. Deshusses, Nanotechnology 19, 332001 (2008). 10.1088/0957-4484/19/33/332001
15. K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. Rohrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, and Th. Seyller, Nat. Mater. 8, 203 (2009). 10.1038/nmat2382
16. C. Riedl, C. Coletti, T. Iwasaki, A. A. Zakharov, and U. Starke, Phys. Rev. Lett. 103, 246804 (2009). 10.1103/PhysRevLett.103.246804
17. C. Riedl, C. Coletti, and U. Starke, J. Phys. D: Appl. Phys. 43, 374009 (2010). 10.1088/0022-3727/43/37/374009
18. See supplementary material at http://dx.doi.org/10.1063/1.4816762 E-APPLAB-103-140330 for Raman map images of the 2D/G peak intensity ratios showing the number of graphene layers on eG and QFeG.
19. A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, Phys. Rev. Lett. 97, 187401 (2006). 10.1103/PhysRevLett.97.187401
20. F. Speck, J. Jobst, F. Fromm, M. Ostler, D. Waldmann, M. Mundhausen, H. B. Weber, and Th. Seyller, Appl. Phys. Lett. 99, 122106 (2011). 10.1063/1.3643034
21. S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, Phys. Rev. B 84, 115458 (2011). 10.1103/PhysRevB.84.115458
22. C. Yu, J. Li, Q. B. Liu, S. B. Dun, Z. Z. He, X. W. Zhang, S. J. Cai, and Z. H. Feng, Appl. Phys. Lett. 102, 013107 (2013). 10.1063/1.4773568
23. A. J. M. Giesbers, P. Prochazka, and C. F. J. Flipse, Phys. Rev. B 87, 195405 (2013). 10.1103/PhysRevB.87.195405
24. T. Low, V. Perebeinos, J. Tersoff, and Ph. Avouris, Phys. Rev. Lett. 108, 096601 (2012). 10.1103/PhysRevLett.108.096601
25. O. Leenaerts, B. Partoens, and F. M. Peeters, Phys. Rev. B 77, 125416 (2008). 10.1103/PhysRevB.77.125416
26. T. O. Wehling, M. I. Katsnelson, and A. I. Lichtenstein, Chem. Phys. Lett. 476, 125 (2009). 10.1016/j.cplett.2009.06.005
27. D. Waldmann, J. Jobst, F. Speck, Th. Seyller, M. Krieger, and H. B. Weber, Nat. Mater. 10, 357 (2011). 10.1038/nmat2988
28. Z. Cheng, Q. Zhou, C. Wang, Q. Li, C. Wang, and Y. Fang, Nano Lett. 11, 767 (2011). 10.1021/nl103977d