Determination of gain in AlGaN cladding free nitride laser diodes

Applied Physics Letters

Volumn 103, Issue 6, 2013, Pages

  Muziol, G ^a   Turski, H ^a   Siekacz, M ^a,b   Sawicka, M ^a,b   Wolny, P ^a   Perlin, P ^a,b   Skierbiszewski, C ^a,b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CONFINEMENT FACTOR; EMISSION WAVELENGTH; EPITAXIAL STRUCTURE; IN COMPOSITIONS; LASING WAVELENGTH; MULTIPLE-QUANTUM-WELL LASER DIODES; OPTICAL GAIN SPECTRA; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY;

WAVELENGTH;

EID: 84881645749     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817754     Document Type: Article

References (13)

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