Monolithic H-bridge brushless DC vibration motor driver with a highly sensitive hall sensor in 0.18 μm complementary metal-oxide semiconductor technologyy

IET Circuits, Devices and Systems

Volumn 7, Issue 4, 2013, Pages 204-210

  Xu, Yue ^a,b   Pan, Hong Bin ^a   He, Shu Zhuan ^a   Li, Li ^a  

^a NANJING UNIVERSITY   (China)

^b NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; EXTERNAL COMPONENTS; LOW SUPPLY VOLTAGES; OPERATING POINTS; PROTECTION FUNCTION; START-UP RELIABILITIES; THERMAL SHUTDOWN; UNDER-VOLTAGE LOCKOUTS;

SEMICONDUCTOR DEVICE MANUFACTURE;

HALL EFFECT TRANSDUCERS;

EID: 84881526561     PISSN: 1751858X     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-cds.2012.0167     Document Type: Article

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