-
1
-
-
79959273516
-
-
10.1039/c1jm10871a 1:CAS:528:DC%2BC3MXntVOqsLk%3D
-
Q.-P. Luo, B.-X. Lei, X.-Y. Yu, D.-B. Kuang, C.-Y. Su, J. Mater. Chem. 21, 8709-8714 (2011)
-
(2011)
J. Mater. Chem.
, vol.21
, pp. 8709-8714
-
-
Luo, Q.-P.1
Lei, B.-X.2
Yu, X.-Y.3
Kuang, D.-B.4
Su, C.-Y.5
-
3
-
-
75049083846
-
-
10.1007/s11051-009-9591-4 1:CAS:528:DC%2BC3cXos1OltQ%3D%3D
-
Y. He, J.A. Wang, X.B. Chen, W.F. Zhang, X.Y. Zeng, Q.W. Gu, J. Nanopart. Res. 12, 169-176 (2010)
-
(2010)
J. Nanopart. Res.
, vol.12
, pp. 169-176
-
-
He, Y.1
Wang, J.A.2
Chen, X.B.3
Zhang, W.F.4
Zeng, X.Y.5
Gu, Q.W.6
-
4
-
-
66749135154
-
-
10.1063/1.3148666
-
J. Yoo, C.-H. Lee, Y.-J. Doh, H.S. Jung, G.-C. Yi, Appl. Phys. Lett. 94, 223113-223117 (2009)
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 223113-223117
-
-
Yoo, J.1
Lee, C.-H.2
Doh, Y.-J.3
Jung, H.S.4
Yi, G.-C.5
-
5
-
-
84865526928
-
-
10.1016/j.mee.2012.03.020 1:CAS:528:DC%2BC38Xht1Gmt7vN
-
M.S. Kim, J.H. Han, D.H. Lee, O. Beom-Hoan, S.G. Lee, E.H. Lee, S.G. Park, Microelectron. Eng. 97, 130-133 (2012)
-
(2012)
Microelectron. Eng.
, vol.97
, pp. 130-133
-
-
Kim, M.S.1
Han, J.H.2
Lee, D.H.3
Beom-Hoan, O.4
Lee, S.G.5
Lee, E.H.6
Park, S.G.7
-
8
-
-
84867743256
-
-
10.1016/j.apsusc.2012.07.115 1:CAS:528:DC%2BC38Xht1ahsb3I
-
R.K. Sendi, S. Mahmud, Appl. Surf. Sci. 261, 128-136 (2012)
-
(2012)
Appl. Surf. Sci.
, vol.261
, pp. 128-136
-
-
Sendi, R.K.1
Mahmud, S.2
-
9
-
-
77954983443
-
-
10.1166/jnn.2010.2171 1:CAS:528:DC%2BC3cXjtlCrsrc%3D
-
C.C. Wu, D.S. Wuu, P.R. Lin, T.N. Chen, R.H. Horng, J. Nanosci. Nanotechnol. 10, 3001-3011 (2010)
-
(2010)
J. Nanosci. Nanotechnol.
, vol.10
, pp. 3001-3011
-
-
Wu, C.C.1
Wuu, D.S.2
Lin, P.R.3
Chen, T.N.4
Horng, R.H.5
-
10
-
-
84860996769
-
-
10.1016/j.jcrysgro.2012.04.018 1:CAS:528:DC%2BC38XotlOgsL4%3D
-
J. Huang, L. Hu, H.H. Zhang, J. Zhang, X.P. Yang, D.H. Li, L.P. Zhu, Z.Z. Ye, J. Cryst. Growth 351, 93-100 (2012)
-
(2012)
J. Cryst. Growth
, vol.351
, pp. 93-100
-
-
Huang, J.1
Hu, L.2
Zhang, H.H.3
Zhang, J.4
Yang, X.P.5
Li, D.H.6
Zhu, L.P.7
Ye, Z.Z.8
-
11
-
-
84864414862
-
-
10.1016/j.jallcom.2012.05.096 1:CAS:528:DC%2BC38XhtFOqsrfE
-
S.Y. Gao, D.M. Li, Y.G. Li, X.Y. Lv, J.Z. Wang, H.T. Li, Q.J. Yu, F.Y. Guo, L.C. Zhao, J. Alloy. Compd. 539, 200-204 (2012)
-
(2012)
J. Alloy. Compd.
, vol.539
, pp. 200-204
-
-
Gao, S.Y.1
Li, D.M.2
Li, Y.G.3
Lv, X.Y.4
Wang, J.Z.5
Li, H.T.6
Yu, Q.J.7
Guo, F.Y.8
Zhao, L.C.9
-
12
-
-
84867920784
-
-
10.1179/1433075X11Y.0000000066 1:CAS:528:DC%2BC38Xhslerur3K
-
Q.F. Sun, Y. Lu, H.M. Zhang, D.J. Yang, J.S. Xu, J. Li, Y.X. Liu, J.T. Shi, Mater. Res. Innovat. 16, 326-331 (2012)
-
(2012)
Mater. Res. Innovat.
, vol.16
, pp. 326-331
-
-
Sun, Q.F.1
Lu, Y.2
Zhang, H.M.3
Yang, D.J.4
Xu, J.S.5
Li, J.6
Liu, Y.X.7
Shi, J.T.8
-
13
-
-
84861097411
-
-
10.1016/j.apsusc.2012.04.009 1:CAS:528:DC%2BC38XlvFagt7g%3D
-
J. Xu, P. Liu, S. Shi, X. Zhang, L. Wang, Z. Ren, L. Ge, L. Li, Appl. Surf. Sci. 258, 7118-7125 (2012)
-
(2012)
Appl. Surf. Sci.
, vol.258
, pp. 7118-7125
-
-
Xu, J.1
Liu, P.2
Shi, S.3
Zhang, X.4
Wang, L.5
Ren, Z.6
Ge, L.7
Li, L.8
-
14
-
-
48249139858
-
-
10.1088/0022-3727/41/13/135010
-
M. Shuai, L. Liao, H.B. Lu, L. Zhang, J.C. Li, D.J. Fu, J. Phys. D Appl. Phys. 41, 135010 (2008)
-
(2008)
J. Phys. D Appl. Phys.
, vol.41
, pp. 135010
-
-
Shuai, M.1
Liao, L.2
Lu, H.B.3
Zhang, L.4
Li, J.C.5
Fu, D.J.6
-
16
-
-
35748982420
-
-
10.1016/j.jallcom.2006.10.076 1:CAS:528:DC%2BD2sXht1ylsrzF
-
S.W. Xue, X.T. Zu, W.L. Zhou, H.X. Deng, X. Xiang, L. Zhang, H. Deng, J. Alloy. Compd. 448, 21-26 (2008)
-
(2008)
J. Alloy. Compd.
, vol.448
, pp. 21-26
-
-
Xue, S.W.1
Zu, X.T.2
Zhou, W.L.3
Deng, H.X.4
Xiang, X.5
Zhang, L.6
Deng, H.7
-
17
-
-
33845993275
-
-
10.1016/j.matlet.2006.06.065 1:CAS:528:DC%2BD2sXltVyntw%3D%3D
-
M. Wang, K.E. Lee, S.H. Hahn, E.J. Kim, S. Kim, J.S. Chung, E.W. Shin, C. Park, Mater. Lett. 61, 1118-1121 (2007)
-
(2007)
Mater. Lett.
, vol.61
, pp. 1118-1121
-
-
Wang, M.1
Lee, K.E.2
Hahn, S.H.3
Kim, E.J.4
Kim, S.5
Chung, J.S.6
Shin, E.W.7
Park, C.8
-
18
-
-
13644273771
-
-
10.1063/1.1855412
-
M. Gabas, S. Gota, J.R. Ramos-Barrado, M. Sanchez, N.T. Barrett, J. Avila, M. Sacchi, Appl. Phys. Lett. 86, 042103-042104 (2005)
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 042103-042104
-
-
Gabas, M.1
Gota, S.2
Ramos-Barrado, J.R.3
Sanchez, M.4
Barrett, N.T.5
Avila, J.6
Sacchi, M.7
-
19
-
-
39549088302
-
-
10.1016/j.apsusc.2007.09.104 1:CAS:528:DC%2BD1cXitlWitrs%3D
-
Q.H. Li, D. Zhu, W. Liu, Y. Liu, X.C. Ma, Appl. Surf. Sci. 254, 2922-2926 (2008)
-
(2008)
Appl. Surf. Sci.
, vol.254
, pp. 2922-2926
-
-
Li, Q.H.1
Zhu, D.2
Liu, W.3
Liu, Y.4
Ma, X.C.5
-
20
-
-
65149092122
-
-
10.1016/j.tsf.2009.02.133
-
G. Xiao-Yong, L. Qing-Geng, F. Hong-Liang, L. Yu-Fen, L. Jing-Xiao, Thin Solid Films 517, 4684-4688 (2009)
-
(2009)
Thin Solid Films
, vol.517
, pp. 4684-4688
-
-
Xiao-Yong, G.1
Qing-Geng, L.2
Hong-Liang, F.3
Yu-Fen, L.4
Jing-Xiao, L.5
-
22
-
-
47549113866
-
-
10.1016/j.jlumin.2008.03.006 1:CAS:528:DC%2BD1cXovFOqsr8%3D
-
D. Behera, B.S. Acharya, J. Lumin. 128, 1577-1586 (2008)
-
(2008)
J. Lumin.
, vol.128
, pp. 1577-1586
-
-
Behera, D.1
Acharya, B.S.2
-
25
-
-
34547317342
-
-
10.1007/s11671-007-9064-6 1:CAS:528:DC%2BD2sXpslegsbg%3D
-
Y. Gong, T. Andelman, G. Neumark, S. O'Brien, I. Kuskovsky, Nanoscale Res. Lett. 2, 297-302 (2007)
-
(2007)
Nanoscale Res. Lett.
, vol.2
, pp. 297-302
-
-
Gong, Y.1
Andelman, T.2
Neumark, G.3
O'Brien, S.4
Kuskovsky, I.5
-
26
-
-
0029774658
-
-
10.1063/1.116699 1:CAS:528:DyaK28Xkt1CgtQ%3D%3D
-
K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Tallant, J.A. Voigt, Appl. Phys. Lett. 68, 403-405 (1996)
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 403-405
-
-
Vanheusden, K.1
Seager, C.H.2
Warren, W.L.3
Tallant, D.R.4
Voigt, J.A.5
|