Modulation doping in ZnO nanorods for electrical nanodevice applications

Applied Physics Letters

Volumn 94, Issue 22, 2009, Pages

  Yoo, Jinkyoung ^a   Lee, Chul Ho ^a   Doh, Yong Joo ^a   Jung, Hye Seong ^a   Yi, Gyu Chul ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE APPLICATION; DOPING LAYERS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CONDUCTIVITY; GA-DOPED ZNO; HOMOGENEOUS DOPING; MODULATION DOPING; MODULATION-DOPED; MOLE FRACTION; NANODEVICE APPLICATIONS; OPTICAL CHARACTERISTICS; ORDER OF MAGNITUDE; ZNO NANOROD;

ELECTRIC CONDUCTIVITY; ELECTRON ABSORPTION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM; MODULATION; NANORODS; OPTICAL MATERIALS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

DOPING (ADDITIVES);

EID: 66749135154     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3148666     Document Type: Article

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