Improved electrical characteristics of honeycomb nanowire ISFETs

IEEE Electron Device Letters

Volumn 34, Issue 8, 2013, Pages 1059-1061

  Rim, Taiuk ^a   Kim, Kihyun ^a   Kim, Sungho ^a   Baek, Chang Ki ^a   Meyyappan, Meyya ^a,b   Jeong, Yoon Ha ^a   Lee, Jeong Soo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

Honeycomb nanowire structure (HCNW); ion sensitive field effect transistor (ISFET); pH sensing; silicon nanowire

Indexed keywords

CURRENT DRIVABILITY; CURRENT SENSITIVITY; DEVICE PERFORMANCE; ELECTRICAL CHARACTERISTIC; NANOWIRE STRUCTURES; PH SENSING; SILICON NANOWIRES; SILICON ON INSULATOR WAFERS;

HONEYCOMB STRUCTURES; ION SENSITIVE FIELD EFFECT TRANSISTORS; PH SENSORS; SILICON WAFERS;

NANOWIRES;

EID: 84881025269     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2265391     Document Type: Article

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