Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform

Optics Express

Volumn 21, Issue 15, 2013, Pages 18236-18248

  Li, Qing ^a   Eftekhar, Ali A ^a   Sodagar, Majid ^a   Xia, Zhixuan ^a   Atabaki, Amir H ^a   Adibi, A ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RESONATORS; SILICON ON INSULATOR TECHNOLOGY;

EVANESCENT COUPLING; SELECTIVE COUPLING; SILICON NITRIDE FILM; SILICON WAVEGUIDE; SILICON-ON-INSULATOR PLATFORMS; SINGLE MODE OPERATION; TELECOMMUNICATION WAVELENGTHS; VERTICAL INTEGRATION;

SILICON NITRIDE;

SILICON; SILICON DERIVATIVE; SILICON NITRIDE;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; ELECTRIC CONDUCTIVITY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; MICROELECTROMECHANICAL SYSTEM; RADIATION EXPOSURE; TELECOMMUNICATION; TRANSDUCER; DEVICE FAILURE ANALYSIS; DEVICES; RADIATION RESPONSE;

COMPUTER-AIDED DESIGN; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MICRO-ELECTRICAL-MECHANICAL SYSTEMS; MINIATURIZATION; SILICON; SILICON COMPOUNDS; TELECOMMUNICATIONS; TRANSDUCERS;

EID: 84880957221     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.018236     Document Type: Article

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