Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals

Optics Express

Volumn 21, Issue 15, 2013, Pages 17941-17950

  Preu, S ^a   Mittendorff, M ^b,c   Winnerl, S ^b   Lu, H ^d   Gossard, A C ^d   Weber, H B ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTOR ELEMENTS; PULSE CHARACTERIZATION; ROOM TEMPERATURE; SENSITIVE DETECTOR; TERAHERTZ PULSE; TERAHERTZ RADIATION; THZ DETECTION; TIME CONSTANTS;

EXPERIMENTS; FIELD EFFECT TRANSISTORS; INFRARED DEVICES; TERAHERTZ WAVES;

DETECTORS;

ARTICLE; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; PHOTOMETRY; SEMICONDUCTOR; SIGNAL PROCESSING; TERAHERTZ RADIATION; TRANSDUCER; DEVICE FAILURE ANALYSIS; DEVICES;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; PHOTOMETRY; SIGNAL PROCESSING, COMPUTER-ASSISTED; TERAHERTZ RADIATION; TRANSDUCERS; TRANSISTORS, ELECTRONIC;

EID: 84880931789     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.017941     Document Type: Article

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