SCOPUS 정보 검색 플랫폼

Volumn 105, Issue 16, 2010, Pages

Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells

(8) Wagner, Martin a Schneider, Harald a Stehr, Dominik a Winnerl, Stephan a Andrews, Aaron M b Schartner, Stephan b Strasser, Gottfried b Helm, Manfred a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

b VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

AUTLER-TOWNES EFFECT; GAAS/ALGAAS; LOW-INTENSITY; MULTIPLE QUANTUM WELLS; NEAR INFRARED; TERA HERTZ; TERAHERTZ FIELDS; TERAHERTZ ILLUMINATION; TRANSITION ENERGY; TWO-LEVEL MODELS; TWO-LEVEL SYSTEM;

INFRARED DEVICES; SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77957928302 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.105.167401 Document Type: Article

Times cited : (138)

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