Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells

Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

  Wagner, M ^a   Schneider, H ^a   Winnerl, S ^a   Helm, M ^a   Roch, T ^b   Andrews, A M ^b   Schartner, S ^b   Strasser, G ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL STUDIES; GAAS/ALGAAS; IN-PLANE; INTER-BAND TRANSITION; LIGHT-HOLE TRANSITIONS; LOW TEMPERATURES; MULTIPLE QUANTUM WELLS; NEAR-INFRARED LASERS; ORDER OF MAGNITUDE; RESONANT ENHANCEMENTS; ROOM TEMPERATURE; SECOND ORDERS; TERA HERTZ;

CONVERSION EFFICIENCY; INFRARED DEVICES; LASERS; OPTICAL FREQUENCY CONVERSION; QUANTUM WELL LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 67649230163     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3155189     Document Type: Article

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