Charge relaxation in a single-electron Si/SiGe double quantum dot

Physical Review Letters

Volumn 111, Issue 4, 2013, Pages

  Wang, K ^a   Payette, C ^a   Dovzhenko, Y ^a   Deelman, P W ^b   Petta, J R ^a,c  

^a PRINCETON UNIVERSITY   (United States)

^b Hughes Aircraft Co   (United States)

^c Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE RELAXATION TIME; DEVICE CONFIGURATIONS; DOUBLE QUANTUM DOTS; ENERGY LEVEL STRUCTURES; INTERDOT TUNNEL COUPLING; LOW-LYING EXCITED STATE; ORDERS OF MAGNITUDE; PHOTON-ASSISTED TUNNELING;

ATOMIC PHYSICS; PHYSICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84880597521     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.111.046801     Document Type: Article

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