On the reactivity of silicon nitride during the electroless NiP deposition for the front side metallization of crystalline silicon solar cells

ECS Solid State Letters

Volumn 1, Issue 3, 2012, Pages

  Kim Hak, Olivier ^a   Haumesser, Paul Henri ^a   Arbaoui, Edrisse ^a   Salaun, Amélie ^a   Gall, Samuel ^b   Monna, Rémi ^b   Mur, Pierre ^a  

^a CEA GRENOBLE   (France)

^b CEA INES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; COPPER DIFFUSION; COPPER ELECTROPLATING; CRYSTALLINE SILICON SOLAR CELLS; ELECTROLESS NI-P DEPOSITIONS; METALLIC STRUCTURES; OXIDIZING TREATMENT; PARASITIC DEPOSITIONS;

COPPER; DEPOSITION; ELECTROPLATING; SILICON; SILICON NITRIDE;

SILICON SOLAR CELLS;

EID: 84880566563     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.005203ssl     Document Type: Article

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