Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

Journal of Semiconductors

Volumn 30, Issue 9, 2009, Pages

  Tang, Longjuan ^a,b   Zhu, Yinfang ^a,b   Yang, Jinling ^a,b   Li, Yan ^a   Zhou, Wei ^a,b   Xie, Jing ^a,b   Liu, Yunfei ^a,b   Yang, Fuhua ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b STATE KEY LABORATORY OF TRANSDUCER TECHNOLOGY   (China)

Author keywords

Etch rate; HF solution; Plasma enhanced chemical vapor deposition; Silicon nitride

Indexed keywords

ANNEALING CONDITION; ANNEALING TEMPERATURES; ETCH RATES; ETCHING SELECTIVITY; GAS FLOWRATE; HF SOLUTION; HF SOLUTIONS; PECVD SILICON NITRIDE; SILICON NITRIDE THIN FILMS; SOURCE GAS; WET ETCH RATE;

AERODYNAMICS; ANNEALING; CHEMICAL VAPOR DEPOSITION; FLOW OF GASES; HYDROFLUORIC ACID; PLASMA DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON OXIDES;

DEPOSITION;

EID: 70349183061     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/30/9/096005     Document Type: Article

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