Si-ge-silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver

IEEE Photonics Journal

Volumn 5, Issue 4, 2013, Pages

  Hiraki, Tatsurou ^a   Nishi, Hidetaka ^a   Tsuchizawa, Tai ^a   Kou, Rai ^a   Fukuda, Hiroshi ^a   Takeda, Kotaro ^a   Ishikawa, Yasuhiko ^b   Wada, Kazumi ^b   Yamada, Koji ^a  

^a NTT CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Silicon nanophotonics; waveguide devices

Indexed keywords

INTERCHANNEL CROSS TALK; MONOLITHIC INTEGRATION; MONOLITHICALLY INTEGRATED; SILICON NANOPHOTONICS; SPOT SIZE CONVERTERS; TELECOMMUNICATIONS APPLICATIONS; TRANSIMPEDANCE AMPLIFIERS; WAVEGUIDE DEVICE;

ARRAYED WAVEGUIDE GRATINGS; CHEMICAL VAPOR DEPOSITION; DIFFERENTIAL AMPLIFIERS; ELECTRIC LOSSES; GERMANIUM; SILICA; SILICON; SILICON ALLOYS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 84880549076     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2013.2269676     Document Type: Article

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