Effect of post-growth annealing on morphology of Ge mesa selectively grown on Si

IEICE Transactions on Electronics

Volumn E91-C, Issue 2, 2008, Pages 181-186

  Park, Sungbong ^a   Ishikawa, Yasuhiko ^a   Tsuchizawa, Tai ^b   Watanabe, Toshifumi ^b   Yamada, Koji ^b   Itabashi, Sei Ichi ^b   Wada, Kazumi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Ge on Si photodetectot selective epitaxial growth; Morphological instability; Post growth annealing; UHV CVD

Indexed keywords

ANNEALING; ATOMS; CHEMICAL VAPOR DEPOSITION; INFRARED DEVICES; SILICON; ULTRAHIGH VACUUM;

MORPHOLOGICAL INSTABILITY; NEAR-INFRARED PHOTODIODES; POSTGROWTH ANNEALING; SELECTIVE EPITAXIAL GROWTH; TRAPEZOIDAL CROSS SECTIONS; UHV-CVD; ULTRA HIGH VACUUM CHEMICAL VAPOR DEPOSITION; ULTRA-HIGH VACUUM CHAMBER;

GERMANIUM;

EID: 70350744997     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.2.181     Document Type: Article

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