Wideband and high reliability RF-MEMS switches using PZT/HfO/sub 2/ multi-layered high K dielectrics

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 259-264

  Tsaur, Jiunnjye ^a   Onodera, Kazumasa ^b   Kobayashi, Takeshi ^a   Ichiki, Masaaki ^a   Maeda, Ryutaro ^a   Suga, Tadatomo ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Netspace Incorporation   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Dielectric constant; Micro switch; RF MEMS

Indexed keywords

BANDWIDTH; ELECTRIC SWITCHES; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; PERMITTIVITY; RELIABILITY; SILICON;

DIELECTRIC RELIABILITY; EQUIVALENT DIELECTRIC CONSTANT; HIGH BREAKDOWN VOLTAGE; HIGH DIELECTRIC CONSTANTS; LOW-POWER CONSUMPTION; MICROSWITCHES; RF-MEMS; SWITCHING PERFORMANCE;

DIELECTRIC MATERIALS;

EID: 84880529250     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315334     Document Type: Conference Paper

References (7)

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