Photoelectrochemical properties of chemically exfoliated MoS2

Journal of Materials Chemistry A

Volumn 1, Issue 31, 2013, Pages 8935-8941

  King, Laurie A ^a   Zhao, Weijie ^b   Chhowalla, Manish ^d   Riley, D Jason ^a   Eda, Goki ^b,c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c National University of Singapore   (Singapore)

^d The State University of New Jersey   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT BAND GAP; ELECTRICAL CURRENT; EXCITATION WAVELENGTH; MONOLAYER FILM; PHOTOELECTROCHEMICAL APPLICATIONS; PHOTOELECTROCHEMICAL PROPERTIES; SOLUTION-PROCESSED; TRANSITION METAL DICHALCOGENIDES (TMD);

DEPOSITION; ELECTROCHEMISTRY; MONOLAYERS; PHOTOSENSITIZERS; TITANIUM DIOXIDE; ULTRATHIN FILMS;

MOLYBDENUM COMPOUNDS;

EID: 84880443112     PISSN: 20507488     EISSN: 20507496     Source Type: Journal    
DOI: 10.1039/c3ta11633f     Document Type: Article

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