-
1
-
-
43049126833
-
The missing memristor found
-
Strukov, D.B., Snider, GS., Stewart, D.R., and Williams, R.S.: 'The missing memristor found', Nature, 2008, 453, (7191), pp. 80-83
-
(2008)
Nature
, vol.453
, Issue.7191
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Williams, R.S.4
-
2
-
-
34250327548
-
2/Pt stack
-
2/Pt stack', Electrochem. Solid-State Lett, 2007, 10, (8), pp. G51-G53
-
(2007)
Electrochem. Solid-State Lett
, vol.10
, Issue.8
-
-
Jeong, D.S.1
Schroeder, H.2
Waser, R.3
-
3
-
-
38349103053
-
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
-
Chang, W.Y., Lai, Y.C., Wu, T.B., Wang, S.F., Chen, F., and Tsai, M J.: 'Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications', Appl. Phys. Lett, 2008, 92, (2), p. 022110
-
(2008)
Appl. Phys. Lett
, vol.92
, Issue.2
, pp. 022110
-
-
Chang, W.Y.1
Lai, Y.C.2
Wu, T.B.3
Wang, S.F.4
Chen, F.5
Tsai, M.J.6
-
4
-
-
42449083659
-
Unipolar resistive switching characteristic of semiconducting poly (o-anthranilic acid) film
-
Lee, D., Baek, S., Ree, M., and Kim, O.: 'Unipolar resistive switching characteristic of semiconducting poly (o-anthranilic acid) film', Electron. Lett, 2008, 44, (9), pp. 596-598
-
(2008)
Electron. Lett
, vol.44
, Issue.9
, pp. 596-598
-
-
Lee, D.1
Baek, S.2
Ree, M.3
Kim, O.4
-
5
-
-
0000748226
-
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
-
Liu, S.Q., Wu, N.J., and Ignatiev, A.: 'Electric-pulse-induced reversible resistance change effect in magnetoresistive films', Appl. Phys. Lett, 2000, 76, (19), pp. 2749-2751
-
(2000)
Appl. Phys. Lett
, vol.76
, Issue.19
, pp. 2749-2751
-
-
Liu, S.Q.1
Wu, N.J.2
Ignatiev, A.3
-
6
-
-
67650465240
-
A flexible solution-processed memristor
-
Gergel-Hackett, N, Hamadani, B., Dunlap, B., Suehle, J., Richter, C, Hacker, C, and Gundlach, D.: 'A flexible solution-processed memristor', IEEE Electron Device Lett, 2009, 30, (7), pp. 706-708
-
(2009)
Electron Device Lett
, vol.30
, Issue.7
, pp. 706-708
-
-
Gergel-Hackett, N.1
Hamadani, B.2
Dunlap, B.3
Suehle, J.4
Richter, C.5
Hacker, C.6
Gundlach, D.7
-
7
-
-
84867064685
-
2 flexible memory device-fabrication and characterisation
-
2 flexible memory device-fabrication and characterisation', Electron. Lett, 2012, 48, (20), pp. 1261-1263
-
(2012)
Electron. Lett
, vol.48
, Issue.20
, pp. 1261-1263
-
-
Rahman, K.1
Mustafa, M.2
Muhammad, N.M.3
Choi, K.H.4
-
8
-
-
67649143212
-
The mechanism of electroforming of metal oxide memristive switches
-
Yang, J.J., Miao, F., Pickett, M.D., Ohlberg, DA., Stewart, D.R., Lau, C.N., and Williams, R.S.: 'The mechanism of electroforming of metal oxide memristive switches', Nanotechnology, 2009, 20, (21), p. 215201
-
(2009)
Nanotechnology
, vol.20
, Issue.21
, pp. 215201
-
-
Yang, J.J.1
Miao, F.2
Pickett, M.D.3
Ohlberg, D.A.4
Stewart, D.R.5
Lau, C.N.6
Williams, R.S.7
-
9
-
-
47749128490
-
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
-
Xu, N, Liu, L.F., Sun, X., Chen, C, Wang, Y., Han, D.D., and Yu, B.: 'Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention', Semicond. Sci. Technol, 2008, 23, (7), p. 075019
-
(2008)
Semicond. Sci. Technol
, vol.23
, Issue.7
, pp. 075019
-
-
Xu, N.1
Liu, L.F.2
Sun, X.3
Chen, C.4
Wang, Y.5
Han, D.D.6
Yu, B.7
-
11
-
-
0037622032
-
Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: Role of oxygen
-
Kumar Barik, U, Srinivasan, S., Nagendra, C.L., and Subrahmanyam, A.: 'Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen', Thin Solid Films, 2003, 429, (1), pp. 129-134
-
(2003)
Thin Solid Films
, vol.429
, Issue.1
, pp. 129-134
-
-
Kumar Barik, U.1
Srinivasan, S.2
Nagendra, C.L.3
Subrahmanyam, A.4
|