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Volumn 44, Issue 9, 2008, Pages 596-598

Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; SWITCHES;

EID: 42449083659     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20080326     Document Type: Article
Times cited : (13)

References (7)
  • 1
    • 0037416568 scopus 로고    scopus 로고
    • Nonvolatile electrical bistability of organic/metal-nanocluster/organic system
    • 10.1063/1.1556555 0003-6951
    • Ma, L., Pyo, S., Ouyang, J., Xu, Q., and Yang., Y.: ' Nonvolatile electrical bistability of organic/metal-nanocluster/organic system ', Appl. Phys. Lett., 2003, 82, p. 1419-1421 10.1063/1.1556555 0003-6951
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 1419-1421
    • Ma, L.1    Pyo, S.2    Ouyang, J.3    Xu, Q.4    Yang., Y.5
  • 2
    • 0037470679 scopus 로고    scopus 로고
    • Key to design functional organic molecules for binary operation with large conductance switching
    • 10.1016/S0009-2614(03)00248-3 0009-2614
    • Bandyopadhyay, A., and Pal, A.J.: ' Key to design functional organic molecules for binary operation with large conductance switching ', Chem. Phys. Lett., 2003, 371, p. 86-90 10.1016/S0009-2614(03)00248-3 0009-2614
    • (2003) Chem. Phys. Lett. , vol.371 , pp. 86-90
    • Bandyopadhyay, A.1    Pal, A.J.2
  • 3
    • 35548987613 scopus 로고    scopus 로고
    • Novel digital nonvolatile memory devices based on semiconducting polymer thin films
    • 1616-301X
    • Baek, S.S., Lee, D.J., Kim, J.Y., Hong, S.H., Kim, O.H., and Ree, M.H.: ' Novel digital nonvolatile memory devices based on semiconducting polymer thin films ', Adv. Funct. Mater., 2007, 17, p. 2637-2644 1616-301X
    • (2007) Adv. Funct. Mater. , vol.17 , pp. 2637-2644
    • Baek, S.S.1    Lee, D.J.2    Kim, J.Y.3    Hong, S.H.4    Kim, O.H.5    Ree, M.H.6
  • 6
    • 33646268403 scopus 로고    scopus 로고
    • Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films
    • 10.1109/LED.2006.872915 0741-3106
    • Tu, C.H., Lai, Y.S., and Kwongi, D.L.: ' Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films ', IEEE Electron Device Lett., 2006, 27, p. 354-356 10.1109/LED.2006.872915 0741-3106
    • (2006) IEEE Electron Device Lett. , vol.27 , pp. 354-356
    • Tu, C.H.1    Lai, Y.S.2    Kwongi, D.L.3
  • 7
    • 0000091193 scopus 로고
    • Electrical phenomena in amorphous oxide films
    • 10.1088/0034-4885/33/3/306 0034-4885
    • Dearnaley, G., Stoneham, A.M., and Morgan, D.V.: ' Electrical phenomena in amorphous oxide films ', Rep. Prog. Phys., 1970, 33, p. 1129-1191 10.1088/0034-4885/33/3/306 0034-4885
    • (1970) Rep. Prog. Phys. , vol.33 , pp. 1129-1191
    • Dearnaley, G.1    Stoneham, A.M.2    Morgan, D.V.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.