-
1
-
-
0037416568
-
Nonvolatile electrical bistability of organic/metal-nanocluster/organic system
-
10.1063/1.1556555 0003-6951
-
Ma, L., Pyo, S., Ouyang, J., Xu, Q., and Yang., Y.: ' Nonvolatile electrical bistability of organic/metal-nanocluster/organic system ', Appl. Phys. Lett., 2003, 82, p. 1419-1421 10.1063/1.1556555 0003-6951
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 1419-1421
-
-
Ma, L.1
Pyo, S.2
Ouyang, J.3
Xu, Q.4
Yang., Y.5
-
2
-
-
0037470679
-
Key to design functional organic molecules for binary operation with large conductance switching
-
10.1016/S0009-2614(03)00248-3 0009-2614
-
Bandyopadhyay, A., and Pal, A.J.: ' Key to design functional organic molecules for binary operation with large conductance switching ', Chem. Phys. Lett., 2003, 371, p. 86-90 10.1016/S0009-2614(03)00248-3 0009-2614
-
(2003)
Chem. Phys. Lett.
, vol.371
, pp. 86-90
-
-
Bandyopadhyay, A.1
Pal, A.J.2
-
3
-
-
35548987613
-
Novel digital nonvolatile memory devices based on semiconducting polymer thin films
-
1616-301X
-
Baek, S.S., Lee, D.J., Kim, J.Y., Hong, S.H., Kim, O.H., and Ree, M.H.: ' Novel digital nonvolatile memory devices based on semiconducting polymer thin films ', Adv. Funct. Mater., 2007, 17, p. 2637-2644 1616-301X
-
(2007)
Adv. Funct. Mater.
, vol.17
, pp. 2637-2644
-
-
Baek, S.S.1
Lee, D.J.2
Kim, J.Y.3
Hong, S.H.4
Kim, O.H.5
Ree, M.H.6
-
4
-
-
33748501587
-
Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application
-
Washington, DC, USA
-
Baek, I.G., Kim, D.C., Lee, M.J., Kim, H.-J., Yim, E.K., Lee, M.S., Lee, J.E., Ahn, S.E., Seo, S., Lee, J.H., Park, J.C., Cha, Y.K., Park, S.O., Kim, H.S., Yoo, I.K., Chung, U., Moon, J.T., and Ryu, B.I.: ' Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application ', Int. Electron Devices Meet., Washington, DC, USA, 2005, p. 750
-
(2005)
Int. Electron Devices Meet.
, pp. 750
-
-
Baek, I.G.1
Kim, D.C.2
Lee, M.J.3
Kim, H.-J.4
Yim, E.K.5
Lee, M.S.6
Lee, J.E.7
Ahn, S.E.8
Seo, S.9
Lee, J.H.10
Park, J.C.11
Cha, Y.K.12
Park, S.O.13
Kim, H.S.14
Yoo, I.K.15
Chung, U.16
Moon, J.T.17
Ryu, B.I.18
-
5
-
-
23944447615
-
2 thin films grown by atomic-layer deposition
-
10.1063/1.2001146 0021-8979
-
2 thin films grown by atomic-layer deposition ', J. Appl. Phys, 2005, 98, p. 033715 10.1063/1.2001146 0021-8979
-
(2005)
J. Appl. Phys
, vol.98
, pp. 033715
-
-
Choi, B.J.1
Jeong, D.S.2
Kim, S.K.3
Rohde, C.4
Choi, S.5
Oh, J.H.6
Kim, H.J.7
Hwang, C.S.8
Szot, K.9
Waser, R.10
Reichenberg, B.11
Tiedke, S.12
-
6
-
-
33646268403
-
Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films
-
10.1109/LED.2006.872915 0741-3106
-
Tu, C.H., Lai, Y.S., and Kwongi, D.L.: ' Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films ', IEEE Electron Device Lett., 2006, 27, p. 354-356 10.1109/LED.2006.872915 0741-3106
-
(2006)
IEEE Electron Device Lett.
, vol.27
, pp. 354-356
-
-
Tu, C.H.1
Lai, Y.S.2
Kwongi, D.L.3
-
7
-
-
0000091193
-
Electrical phenomena in amorphous oxide films
-
10.1088/0034-4885/33/3/306 0034-4885
-
Dearnaley, G., Stoneham, A.M., and Morgan, D.V.: ' Electrical phenomena in amorphous oxide films ', Rep. Prog. Phys., 1970, 33, p. 1129-1191 10.1088/0034-4885/33/3/306 0034-4885
-
(1970)
Rep. Prog. Phys.
, vol.33
, pp. 1129-1191
-
-
Dearnaley, G.1
Stoneham, A.M.2
Morgan, D.V.3
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