SCOPUS 정보 검색 플랫폼

Journal of Physics: Conference Series

Volumn 439, Issue 1, 2013, Pages

Growth and interface properties of Au Schottky contact on ZnO grown by molecular beam epitaxy

(4) Asghar, M a Mahmood, K a Malik, Faisal a Hasan, M A b

a THE ISLAMIA UNIVERSITY OF BAHAWALPUR (Pakistan)

b UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

CONTACT PROPERTIES; DENSITY OF INTERFACE STATE; E BEAM EVAPORATION; FREQUENCY-DEPENDENT CAPACITANCE; INTERFACE PROPERTY; INVERSE PROPORTIONS; MEASURING FREQUENCY; SERIES RESISTANCES;

INTERFACE STATES;

EID: 84880259283 PISSN: 17426588 EISSN: 17426596 Source Type: Conference Proceeding
DOI: 10.1088/1742-6596/439/1/012031 Document Type: Conference Paper

Times cited : (19)

References (12)

1
- 74249119256
- 10.1016/j.apsusc.2009.10.086 0169-4332
- Zou C W, Wang H J, Yi ML, Li M, Liu C S, Guo L P, Fu D J and Kang TW 2010 Appl. Surf. Sci. 256 2453
- (2010) Appl. Surf. Sci. , vol.256 , Issue.8 , pp. 2453
- Zou, C.W.¹ Wang, H.J.² Yi, M.L.³ Li, M.⁴ Liu, C.S.⁵ Guo, L.P.⁶ Fu, D.J.⁷ Kang, T.W.⁸

2
- 84861439468
- 10.4028/www.scientific.net/KEM.510-511.132 1662-9795
- Asghar M, Mahmood K and Hasan M A 2012 Key Eng. Mater. 511-512 132
- (2012) Key Eng. Mater. , vol.510-511 , pp. 132
- Asghar, M.¹ Mahmood, K.² Hasan, M.A.³

3
- 17744395709
- 10.1016/j.apsusc.2004.11.022 0169-4332
- Karadeniz S, Tugluoglu N, Serin T and Serin N 2005 Appl. Surf. Sci. 246 30
- (2005) Appl. Surf. Sci. , vol.246 , Issue.1-3 , pp. 30
- Karadeniz, S.¹ Tugluoglu, N.² Serin, T.³ Serin, N.⁴

4
- 2942532813
- 10.1016/j.apsusc.2004.03.216 0169-4332
- Karadeniz S, Tugluoglu N, Serin T and Serin N 2004 Appl. Surf. Sci. 233 5
- (2004) Appl. Surf. Sci. , vol.233 , Issue.1-4 , pp. 5
- Karadeniz, S.¹ Tugluoglu, N.² Serin, T.³ Serin, N.⁴

5
- 0025067280
- 10.1016/0038-1101(90)90003-W 0038-1101
- Cova P and Sing A 1990 Solid-State Electon. 33 11
- (1990) Solid-State Electon. , vol.33 , Issue.1 , pp. 11
- Cova, P.¹ Sing, A.²

6
- 67349086259
- 10.1016/j.cap.2009.01.009 1567-1739
- Songul D, Emre G, Syedi D and Sebahattin T 2009 Current Appl. Phys. 9 1181
- (2009) Current Appl. Phys. , vol.9 , Issue.6 , pp. 1181
- Songul, D.¹ Emre, G.² Syedi, D.³ Sebahattin, T.⁴

7
- 84861427591
- 10.4028/www.scientific.net/KEM.510-511.227 1662-9795
- Asghar M, Mahmood K and Hasan M A 2012 Key Eng. Mater. 511-512 227
- (2012) Key Eng. Mater. , vol.510-511 , pp. 227
- Asghar, M.¹ Mahmood, K.² Hasan, M.A.³

8
- 0011715992
- 10.1088/0022-3727/4/10/319 0022-3727
- Card H and Rodrick EH 1971 J. Phys. D: Appl. Phys. 4 1589
- (1971) J. Phys. D: Appl. Phys. , vol.4 , Issue.10 , pp. 1589
- Card, H.¹ Rodrick, E.H.²

9
- 0942278025
- 10.1063/1.1638898 0003-6951
- Wenksten H V, Kaidashev E M, Lorentz M, Hochmuth H, Biehne G, Lenzer J, Gottscalch V, Pickenhain R and Grundmann M 2004 Appl. Phys.Lett. 84 79
- (2004) Appl. Phys.Lett. , vol.84 , Issue.1 , pp. 79
- Wenksten, H.V.¹ Kaidashev, E.M.² Lorentz, M.³ Hochmuth, H.⁴ Biehne, G.⁵ Lenzer, J.⁶ Gottscalch, V.⁷ Pickenhain, R.⁸ Grundmann, M.⁹

10
- 84939383977
- 0005-8580
- Nicollian E H and Goetzberger A 1967 Bell Syst. Tech. J. 46 1055
- (1967) Bell Syst. Tech. J. , vol.46 , pp. 1055
- Nicollian, E.H.¹ Goetzberger, A.²

11
- 0001168597
- 10.1016/0038-1101(85)90003-6 0038-1101
- Sing A 1985 Solid-State Electron. 28 233
- (1985) Solid-State Electron. , vol.28 , Issue.3 , pp. 233
- Sing, A.¹

12
- 0019056629
- 10.1016/0038-1101(80)90064-7 0038-1101
- Hill W A and Coleman C C 1980 Solid-State Electron. 23 987
- (1980) Solid-State Electron. , vol.23 , Issue.9 , pp. 987
- Hill, W.A.¹ Coleman, C.C.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.