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Volumn 27, Issue , 2012, Pages 419-425

Influence of gas mixture ratio on properties of SiNx:H films for Crystalline Silicon Solar Cells

Author keywords

Field effect; Gas mixture; Optical property; Passivation; Silicon nitride; Silicon solar cells

Indexed keywords


EID: 84879952784     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.07.087     Document Type: Conference Paper
Times cited : (5)

References (14)
  • 1
    • 84861435358 scopus 로고    scopus 로고
    • Detailed study of the composition of hydrogenated SiNx layers for High-Quality silicon surface passivation
    • H. Mackel and R. Ludemann, "Detailed study of the composition of hydrogenated SiNx layers for high-quality silicon surface passivation" J. Appl. Phys., to be published, (2002).
    • (2002) J. Appl. Phys.
    • Mackel, H.1    Ludemann, R.2
  • 4
    • 84897134691 scopus 로고    scopus 로고
    • World Scientific Publishing Co. Pte. Ltd., Taiwan
    • Chue San Yoo, Semiconductor manufacturing technology (World Scientific Publishing Co. Pte. Ltd., Taiwan, 2008), pp. 174-178.
    • (2008) Semiconductor Manufacturing Technology , pp. 174-178
    • San Yoo, C.1
  • 6
    • 0004277486 scopus 로고
    • John Eiley & Sons, Inc., Canada
    • E. H. NICOLLIAN, J. R. BREWS, MOS (John Eiley & Sons, Inc., Canada, 1982).
    • (1982) MOS
    • Nicollian, E.H.1    Brews, J.R.2
  • 11


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.