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Volumn , Issue , 2006, Pages 135-140

Low-temperature sintering of nanoscale silver paste: A lead-free die-attach solution for high-performance and high-temperature electronic packaging

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE MATERIALS; HIGH-TEMPERATURE ELECTRONICS; LOW-TEMPERATURE SINTERING; NANOSCALE SILVER PASTE; PERFORMANCE AND RELIABILITIES; THERMAL AND MECHANICAL PROPERTIES; THERMAL CYCLING TEST; THERMOMECHANICAL RELIABILITY;

EID: 84879854153     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (12)
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    • Chen, L. Y., Hunter, G. W., and Neudeck, P. G., "Silicon carbide die-attach scheme for 500 C operation, " in Wide-Bandgap Electronic Devices Symp. (Materials Research Soc. Symp.) Proc., vol. 622, San Francisco, CA, 2001, pp. T8.10.1-6.
    • Wide-Bandgap Electronic Devices Symp , vol.622
    • Chen, L.Y.1    Hunter, G.W.2    Neudeck, P.G.3
  • 3
    • 3042762894 scopus 로고    scopus 로고
    • Thermomechanical analysis of gold-based SiC die-attach assembly
    • Meyyappan, K., McCluskey, P., and Chen, L. Y., "Thermomechanical analysis of gold-based SiC die-attach assembly, " IEEE Trans. Device and Mat. Reli., vol. 3, no. 4, pp. 152-158, 2003.
    • (2003) IEEE Trans. Device and Mat. Reli , vol.3 , Issue.4 , pp. 152-158
    • Meyyappan, K.1    McCluskey, P.2    Chen, L.Y.3
  • 4
    • 0036768050 scopus 로고    scopus 로고
    • Silverindium joints produced at low temperature for high temperature devices
    • Chuang, R. W., and Lee, C. C., "Silverindium joints produced at low temperature for high temperature devices, " IEEE Trans. Comp. Pack. Tech., vol. 25, pp. 453-458, 2002.
    • (2002) IEEE Trans. Comp. Pack. Tech. , vol.25 , pp. 453-458
    • Chuang, R.W.1    Lee, C.C.2
  • 6
    • 0025800802 scopus 로고
    • Novel large area joining technique for improved power device performance
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    • Schwarzbauer, H.1    Kuhnert, R.2
  • 7
    • 33845572282 scopus 로고    scopus 로고
    • Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material
    • Accepted by, in June
    • Bai, J. G., Zhang, Z. Z., Calata, J. N., and Lu, G. Q., "Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material, " Accepted by IEEE Trans. Comp. Pack. Tech. in June 2005.
    • (2005) IEEE Trans. Comp. Pack. Tech.
    • Bai, J.G.1    Zhang, Z.Z.2    Calata, J.N.3    Lu, G.Q.4
  • 8
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  • 10
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    • Characterization of solder/copper interfacial thermal resistance by the flash technique
    • Bai, J. G., Zhang, Lu, G. Q. and Hasselmand, D. P. H., "Characterization of solder/copper interfacial thermal resistance by the flash technique, " International J. Thermophys., vol. 26, no. 5, pp.1607-1615, 2005.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.