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Volumn 2, Issue , 2006, Pages 1469-1472
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Surface passivation properties of stacked doped pecvd a-Si:H layers for hetero-structure c-Si solar cells
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
HETEROJUNCTIONS;
PASSIVATION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
RECOMBINATION LOSSES;
SURFACE PASSIVATION;
SILICON SOLAR CELLS;
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EID: 41749103091
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/WCPEC.2006.279746 Document Type: Conference Paper |
Times cited : (8)
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References (10)
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