Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Chen, X ^a   Matthews, K D ^a   Hao, D ^a   Schaff, W J ^a   Eastman, L F ^a   Walukiewicz, W ^b   Ager, J W ^b   Yu, K M ^b  

^a Cornell University   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; FILL FACTOR; INDIUM CONTENT; MG-DOPING; P-I-N JUNCTIONS; PHOTORESPONSES; SAPPHIRE SUBSTRATES; SOLAR APPLICATIONS;

SAPPHIRE;

GALLIUM ALLOYS;

EID: 84879716863     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922690     Document Type: Conference Paper

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