External noise effects in silicon MOS inversion layer

Acta Physica Polonica B

Volumn 44, Issue 5, 2013, Pages 1163-1172

  Lodato, M A ^a   Persano Adorno, D ^a   Pizzolato, N ^a   Spezia, S ^a   Spagnolo, B ^a  

^a UNIVERSITY OF PALERMO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOCORRELATION FUNCTIONS; ELECTRON TRANSPORT; FLUCTUATING COMPONENTS; MONTE CARLO PROCEDURES; POTENTIAL PROFILES; QUASI-TWO-DIMENSIONAL ELECTRON GAS; STATIC ELECTRIC FIELDS; VELOCITY FLUCTUATIONS;

ELECTRIC FIELD EFFECTS; ELECTRON GAS; INVERSION LAYERS; SILICON; SPECTRAL DENSITY;

SEMICONDUCTING SILICON;

EID: 84879563465     PISSN: 05874254     EISSN: None     Source Type: Journal    
DOI: 10.5506/APhysPolB.44.1163     Document Type: Article

References (39)

1. R. Brunetti, C. Jacoboni, Phys. Rev. B29, 5739 (1984).
2. L. Varani et al., IEEE Trans. Electr. Dev. 41, 1916 (1994).
3. J.-P. Nougier, IEEE Trans. Electr. Dev. 41, 2034 (1994).
4. L. Reggiani et al., Microelectronics J. 28, 183 (1997).
5. P. Shiktorov et al., Phys. Rev. B67, 165201 (2003).
6. P. Shiktorov et al., Phys. Status Solidi A190, 271 (2002).
7. J.F. Millithaler et al., J. Stat. Mech. Theor. Exp. 02, P02030 (2009).
8. S. Perez, T. Gonzalez, Semicond. Sci. Technol. 17, 696 (2002).
9. D. Pardo et al., Semicond. Sci. Technol. 26, 055023 (2011).
10. T. Gonzalez et al., Proceedings of SPIE 5113, 252 (2003).
11. D. Persano Adorno, M.C. Capizzo, M. Zarcone, J. Comput. Electron. 5, 475 (2006);
12. Fluctuation Noise Lett. 8, L11 (2008).
13. D. Persano Adorno, M.C. Capizzo, N. Pizzolato, Acta Phys. Pol. A 113, 979 (2008).
14. J.M.G. Vilar, J.M. Rubi, Phys. Rev. Lett. 86, 950 (2001).
15. D.B. Walton, K. Visscher, Phys. Rev. E69, 051110 (2004).
16. Y. Seol, K. Visscher, Phys. Rev. Lett. 93, 160602 (2004).
17. R.N. Mantegna, B. Spagnolo, Nuovo Cim. D17, 873 (1995).
18. L. Gammaitoni, P. Hanggi, P. Jung, F. Marchesoni, Rev. Mod. Phys. 70, 223 (1998).
19. S. Spezia et al., Eur. Phys. J. B65, 453 (2008).
20. M.D. McDonnell, D. Abbott, PLoS Comput. Biol. 5, e1000348 (2009).
21. B. Spagnolo et al., Acta Phys. Pol. B 38, 1925 (2007).
22. N. Pizzolato, A. Fiasconaro, D. Persano Adorno, B. Spagnolo, Phys. Biol. 7, 034001 (2010);
23. J. Chem. Phys. 138, 054902 (2013).
24. N.V. Agudov, B. Spagnolo, Phys. Rev. E64, 035102(R) (2001).
25. A A. Dubkov, N.V. Agudov, B. Spagnolo, Phys. Rev. E69, 061103 (2004).
26. D. Persano Adorno, N. Pizzolato, B. Spagnolo, Acta Phys. Pol. A 113, 985 (2008).
27. D. Persano Adorno, N. Pizzolato, B. Spagnolo, J. Stat. Mech. Theor. Exp. 01, P01039 (2009).
28. D. Persano Adorno, N. Pizzolato, D. Valenti, B. Spagnolo, Rep. Math. Phys. 70, 171 (2012).
29. L. Varani et al., Unsolved Problems of Noise and Fluctuations: UpoN2005, American Institute of Physics, 2005, pp. 474-479.
30. U. Atxitia et al., Phys. Rev. Lett. 102, 057203 (2009).
31. T. Bose, S. Trimper, Phys. Rev. B81, 104413 (2010).
32. S. Spezia, D. Persano Adorno, N. Pizzolato, B. Spagnolo, J.Phys.: Condens. Matter 24, 052204 (2012);
33. Acta Phys. Pol. B 43, 1191 (2012).
34. I. Knezevic, E.B. Ramayya, D. Vasileska, S.M. Goodnick, J. Comput. Theor. Nanosci. 6, 1725 (2009).
35. T. Ando, A.B. Fowler, F. Stern, Rev. Mod. Phys. 54, 437 (1982).
36. K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices, Artech House Inc., Norwood 1993.
37. W. Walukiewicz, H.E. Ruda, J. Lagowski, H.C. Gatos, Phys. Rev. B30, 4571 (1984).
38. D. Persano Adorno, M. Zarcone, G. Ferrante, Laser Phys. 11, 291 (2001); 13, 270 (2003).
39. C.W. Gardiner Handbook of Stochastic Methods for Physics, Chemistry and the Natural Sciences, Springer-Verlag, Berlin 1993.