MnTe semiconductor-sensitized boron-doped TiO2 and ZnO photoelectrodes for solar cell applications

Journal of Colloid and Interface Science

Volumn 405, Issue , 2013, Pages 78-84

  Tubtimtae, Auttasit ^a   Arthayakul, Khanittha ^a   Teekwang, Bussayanee ^a   Hongsith, Kritsada ^b,c   Choopun, Supab ^b,c  

^a KASETSART UNIVERSITY   (Thailand)

^b CHIANG MAI UNIVERSITY   (Thailand)

^c Thailand Ministry of Science and Technology   (Thailand)

Author keywords

Boron doped metal oxides; Manganese telluride; Semiconductor sensitizer; Solar cell; Successive ionic layer adsorption and reaction

Indexed keywords

MANGANESE TELLURIDE; METAL OXIDES; POWER CONVERSION EFFICIENCIES; SEMICONDUCTOR-SENSITIZED SOLAR CELLS; SOLAR-CELL APPLICATIONS; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; ZNO NANOPARTICLES; ZNO NANOSTRUCTURES;

ADSORPTION; CONVERSION EFFICIENCY; ENERGY GAP; METALLIC COMPOUNDS; SEMICONDUCTOR DOPING; SOLAR CELLS; SOLIDS; TITANIUM DIOXIDE; X RAY DIFFRACTION; ZINC OXIDE;

SEMICONDUCTING TELLURIUM COMPOUNDS;

BORON; MANGANESE; METAL OXIDE; NANOPARTICLE; TELLURIUM; TITANIUM DIOXIDE; ZINC OXIDE;

ADSORPTION; ARTICLE; CHEMICAL REACTION; CHEMICAL STRUCTURE; ELECTRICAL EQUIPMENT; ENERGY; ENERGY CONVERSION; LIGHT ABSORPTION; PARTICLE SIZE; PRIORITY JOURNAL; SEMICONDUCTOR; SENSITIZATION; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

EID: 84879553430     PISSN: 00219797     EISSN: 10957103     Source Type: Journal    
DOI: 10.1016/j.jcis.2013.05.038     Document Type: Article

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