SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Microelectronic Engineering

Volumn 112, Issue , 2013, Pages 31-34

Memristive behavior of ZnO/NiO stacked heterostructure

(6) Zhang, R a,b Yuldashev, Sh U a Lee, J C a Yalishev, V Sh a,c Kang, T W a Fu, D J b

a Dongguk University (South Korea)

b WUHAN UNIVERSITY (China)

c Konkuk University (South Korea)

Author keywords

I V hysteresis; Memristive; ZnO NiO

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; ELEVATED TEMPERATURE; MEMRISTIVE; MEMRISTIVE BEHAVIOR; ROOM TEMPERATURE; STACKED STRUCTURE; ULTRASONIC PYROLYSIS; ZNO;

MAGNETIC MATERIALS; MICROELECTRONICS;

OXYGEN VACANCIES;

EID: 84879493072 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2013.05.018 Document Type: Article

Times cited : (18)

References (21)

1
- 60549098976
- J. Borghetti, Z. Li, J. Straznicky, X. Li, D.A.A. Ohlberg, W. Wu, D.R. Stewart, and R.S. Williams Proc. Natl. Acad. Sci. USA 106 2009 1699
- (2009) Proc. Natl. Acad. Sci. USA , vol.106 , pp. 1699
- Borghetti, J.¹ Li, Z.² Straznicky, J.³ Li, X.⁴ Ohlberg, D.A.A.⁵ Wu, W.⁶ Stewart, D.R.⁷ Williams, R.S.⁸

2
- 77951026760
- S.H. Jo, T. Chang, I. Ebong, B.B. Bhadviya, P. Mazumder, and W. Lu Nano Lett. 10 2010 1297
- (2010) Nano Lett. , vol.10 , pp. 1297
- Jo, S.H.¹ Chang, T.² Ebong, I.³ Bhadviya, B.B.⁴ Mazumder, P.⁵ Lu, W.⁶

3
- 77950852717
- J. Borghetti, G.S. Snider, P.J. Kuekes, J.J. Yang, D.R. Stewart, and R.S. Williams Nature 464 2010 873
- (2010) Nature , vol.464 , pp. 873
- Borghetti, J.¹ Snider, G.S.² Kuekes, P.J.³ Yang, J.J.⁴ Stewart, D.R.⁵ Williams, R.S.⁶

4
- 43049126833
- D.B. Strukov, G.S. Snider, D.R. Stewart, and R.S. Williams Nature 453 2008 80
- (2008) Nature , vol.453 , pp. 80
- Strukov, D.B.¹ Snider, G.S.² Stewart, D.R.³ Williams, R.S.⁴

5
- 79960547687
- J. Qiu, A. Shih, W. Zhou, Z. Mi, and J. Ishiang Shih Appl. Phys. 110 2011 014513
- (2011) Appl. Phys. , vol.110 , pp. 014513
- Qiu, J.¹ Shih, A.² Zhou, W.³ Mi, Z.⁴ Ishiang Shih, J.⁵

6
- 68249109103
- T. Driscoll, H.-T. Kim, B.-G. Chae, M. Di Ventra, and D.N. Basov Appl. Phys. Lett. 95 2009 043503
- (2009) Appl. Phys. Lett. , vol.95 , pp. 043503
- Driscoll, T.¹ Kim, H.-T.² Chae, B.-G.³ Di Ventra, M.⁴ Basov, D.N.⁵

7
- 80855156709
- A.C. Torrezan, J.P. Strachan, G.M. Ribeiro, and R.S. Williams Nanotechnology 22 2011 485203
- (2011) Nanotechnology , vol.22 , pp. 485203
- Torrezan, A.C.¹ Strachan, J.P.² Ribeiro, G.M.³ Williams, R.S.⁴

8
- 33846984225
- K. Jung, H. Seo, Y. Kim, and H. Im Appl. Phys. Lett. 90 2007 052104
- (2007) Appl. Phys. Lett. , vol.90 , pp. 052104
- Jung, K.¹ Seo, H.² Kim, Y.³ Im, H.⁴

9
- 80053197782
- X.J. Liu, K.P. Biju, J. Lee, J. Park, S. Kim, S. Park, J. Shin, S.M. Sadaf, and H. Hwang Appl. Phys. Lett. 99 2011 113518
- (2011) Appl. Phys. Lett. , vol.99 , pp. 113518
- Liu, X.J.¹ Biju, K.P.² Lee, J.³ Park, J.⁴ Kim, S.⁵ Park, S.⁶ Shin, J.⁷ Sadaf, S.M.⁸ Hwang, H.⁹

10
- 84879478034
- B. Long, J. Ordosgoitti, R. Jha, and C. Melkonian IEEE Trans. Electron Dev. 58 2011 11
- (2011) IEEE Trans. Electron Dev. , vol.58 , pp. 11
- Long, B.¹ Ordosgoitti, J.² Jha, R.³ Melkonian, C.⁴

11
- 79959353918
- J.J. Yang, J.P. Strachan, F. Miao, M.-X. Zhang, M.D. Pickett, W. Yi, D.A.A. Ohlberg, G. Medeiros-Ribeiro, and R.S. Williams Appl. Phys. A 102 2011 785
- (2011) Appl. Phys. A , vol.102 , pp. 785
- Yang, J.J.¹ Strachan, J.P.² Miao, F.³ Zhang, M.-X.⁴ Pickett, M.D.⁵ Yi, W.⁶ Ohlberg, D.A.A.⁷ Medeiros-Ribeiro, G.⁸ Williams, R.S.⁹

12
- 80052958489
- Y.F. Chang, T.C. Chang, and C.Y. Chang J. Appl. Phys. 110 2011 053703
- (2011) J. Appl. Phys. , vol.110 , pp. 053703
- Chang, Y.F.¹ Chang, T.C.² Chang, C.Y.³

13
- 78149457942
- J. Lee, E.M. Bourim, W. Lee, J. Park, and M. Jo Appl. Phys. Lett. 97 2010 172105
- (2010) Appl. Phys. Lett. , vol.97 , pp. 172105
- Lee, J.¹ Bourim, E.M.² Lee, W.³ Park, J.⁴ Jo, M.⁵

14
- 79956124770
- K.M. Kim, S.J. Song, G.H. Kim, J.Y. Seok, M.H. Lee, J.H. Yoon, and C.S. Hwang Adv. Funct. Mater. 21 2011 1587
- (2011) Adv. Funct. Mater. , vol.21 , pp. 1587
- Kim, K.M.¹ Song, S.J.² Kim, G.H.³ Seok, J.Y.⁴ Lee, M.H.⁵ Yoon, J.H.⁶ Hwang, C.S.⁷

15
- 77955656422
- Y.V. Pershin, and M.D. Ventra IEEE Trans. Circuits Syst. I 57 Pt I 2010 1857
- (2010) IEEE Trans. Circuits Syst. i , vol.57 , Issue.PART I , pp. 1857
- Pershin, Y.V.¹ Ventra, M.D.²

16
- 34547670918
- P. Singh, and A. Kumar Growth 306 2007 303
- (2007) Growth , vol.306 , pp. 303
- Singh, P.¹ Kumar, A.²

17
- 79955920066
- T. Chang, S.H. Jo, K.H. Kim, P. Sheridan, S. Gaba, and W. Lu Appl. Phys. A 102 2011 857
- (2011) Appl. Phys. A , vol.102 , pp. 857
- Chang, T.¹ Jo, S.H.² Kim, K.H.³ Sheridan, P.⁴ Gaba, S.⁵ Lu, W.⁶

18
- 0003548707
- first ed. Pergamon Press pp. 178-181
- Z.M. Jarzebski Oxide Semiconductors first ed. 1974 Pergamon Press pp. 178-181
- (1974) Oxide Semiconductors
- Jarzebski, Z.M.¹

19
- 57349103386
- Springer-Verlag pp. 14-19
- K. Ellmer, A. Klein, and B. Rech Transparent Conductive Zinc Oxide 2007 Springer-Verlag pp. 14-19
- (2007) Transparent Conductive Zinc Oxide
- Ellmer, K.¹ Klein, A.² Rech, B.³

20
- 33846519391
- S. Lany, and A. Zunger Phys. Rev. Lett. 98 2007 045501
- (2007) Phys. Rev. Lett. , vol.98 , pp. 045501
- Lany, S.¹ Zunger, A.²

21
- 35148897661
- A. Janotti, and C.G. Van de Walle Phys. Rev. B 76 2007 165202
- (2007) Phys. Rev. B , vol.76 , pp. 165202
- Janotti, A.¹ Van De Walle, C.G.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.