Synthesis of InP semiconductor nanowires containing stacking faults structure

Materials Letters

Volumn 107, Issue , 2013, Pages 178-180

  Yu, Yanlong ^a,b   Zhao, Yisong ^a   Gao, Faming ^a   Hou, Li ^a  

^a YANSHAN UNIVERSITY   (China)

^b NORTHEAST PETROLEUM UNIVERSITY   (China)

Author keywords

Nanocrystalline materials; Semiconductors

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; ELECTRICAL AND OPTICAL PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPIES (EDS); MORPHOLOGY AND STRUCTURES; SELECTED AREA ELECTRON DIFFRACTION; SEMICONDUCTOR NANOSTRUCTURES; SEMICONDUCTOR NANOWIRE; SPHALERITE STRUCTURE;

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; ENERGY DISPERSIVE SPECTROSCOPY; NANOCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC SULFIDE;

NANOWIRES;

EID: 84879469781     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2013.05.140     Document Type: Article

References (13)

1. M.S. Gudiksen, J. Wang, and C.M. Lieber Synthetic control of the diameter and length of single crystal semiconductor nanowires J Phys Chem B 105 2001 4062 4064 (Pubitemid 35381536)
2. T.J. Trentler, K.M. Hickman, S.C. Goel, A.M. Viano, P.C. Gibbons, and W.E. Buhro Solution-liquid-solid growth of crystalline III-V semiconductors: an analogy to vapor-liquid-solid growth Science 270 1995 1791 1794 (Pubitemid 126635481)
3. M.S. Gudiksen, and C.M. Lieber Diameter-selective synthesis of semiconductor nanowires Growth 127 1993 857
4. X. Duan, and C.M. Lieber General synthesis of compound semiconductor nanowires Adv Mater 12 2000 298 302 (Pubitemid 30551854)
5. X. Duan, Y. Huang, Y. Cui, J. Wang, and C.M. Lieber Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices Nature 409 2001 66 69 (Pubitemid 32098623)
6. H. Giessen, B. Fluegel, G. Mohs, N. Peyghambarian, J.R. Sprague, and O.I. Micic Observation of the quantum confined ground state in InP quantum dots at 300 K Appl Phys Lett 68 1996 304 306 (Pubitemid 126683708)
7. M.S. Gudiksen, J. Wang, and C.M. Lieber Size-dependent photoluminescence from single indium phosphide nanowires J Phys Chem B 106 2002 4036 4039 (Pubitemid 35290135)
8. H.J. Haugan, W. Yu, S.T. Lee, A. Petrou, B.D. McCombe, and K.S. Brewer Low temperature metalorganic chemical vapor deposition growth of InP using the new precursors pentamethylcyclopentadienylindium(I) and white phosphorus J Cryst Growth 244 2002 157 167 (Pubitemid 35000297)
9. J. Zhou, X.M. Ren, Q. Wang, D.P. Xiong, H. Huang, and Y.Q. Huang Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD Microelectron J 38 2007 255 258 (Pubitemid 46177034)
10. M.S. Gudiksen, L.J. Lauhon, J. Wang, D.C. Smith, and C.M. Lieber Growth of nanowire superlattice structures for nanoscale photonics and electronics Nature 415 2002 617 620 (Pubitemid 34136383)
11. S.T. Boles, C.V. Thompson, and E.A. Fitzgerald Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates J Cryst Growth 311 2009 1446 1450
12. G. Shen, Y. Bando, C. Ye, B. Liu, and D. Golberg Synthesis, characterization and field-emission properties of bamboo-like β-SiC nanowires Nanotechnology 17 2006 3468
13. R.E. Algra, M.A. Verheijen, M.T. Borgstrom, L.-F. Feiner, G. Immink, and W.J.P. van Enckevort Twinning superlattices in indium phosphide nanowires Nature 456 2008 369 372