Low temperature metalorganic chemical vapor deposition growth of InP using the new precursors pentamethylcyclopentadienylindium(I) and white phosphorus

Journal of Crystal Growth

Volumn 244, Issue 2, 2002, Pages 157-167

  Haugan, H J ^a,c   Yu, W ^a   Lee, S T ^a   Petrou, A ^a   McCombe, B D ^a   Brewer, K S ^b   Lees, J F ^a   Beachley Jr , O T ^a  

^a UNIVERSITY AT BUFFALO   (United States)

^b HAMILTON COLLEGE   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

A1. Crystal morphology; A3. Metalorganic chemical vapor deposition; B1. Phosphides; B2. Semiconducting III V materials; B2. Semiconducting indium phosphide

Indexed keywords

DOPING (ADDITIVES); EXCITONS; IRON; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE;

PHOSPHIDES;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0036776451     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01647-0     Document Type: Article

References (21)