Graphene nanoribbon FETs for digital electronics: Experiment and modeling

International Journal of Circuit Theory and Applications

Volumn 41, Issue 6, 2013, Pages 603-607

  Tahy, Kristof ^a   Xing, Huili ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

graphene; high field transport; nanoribbon; p n junction; transistor

Indexed keywords

DIGITAL ELECTRONICS; FIELD EFFECT TRANSISTOR (FETS); GRAPHENE NANORIBBON FETS; GRAPHENE NANORIBBONS (GNRS); HIGH FIELD TRANSPORT; INTERBAND TUNNELING; ONE-DIMENSIONAL NANOSTRUCTURE; P-N JUNCTION;

GRAPHENE; HIGH ELECTRON MOBILITY TRANSISTORS; NANOSTRUCTURES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS; TRANSPORT PROPERTIES;

NANORIBBONS;

EID: 84879414213     PISSN: 00989886     EISSN: 1097007X     Source Type: Journal    
DOI: 10.1002/cta.1801     Document Type: Article

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