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Volumn 5, Issue , 2003, Pages 2447-2453

The schottky junction transistor - A contender for ultralow-power radiation-tolerant space electronics

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CONFIGURATIONS; GATE CAPACITANCE; MEASUREMENTS OF; PROTOTYPE DEVICES; SCHOTTKY JUNCTION TRANSISTOR; SPACE ELECTRONICS; SUBTHRESHOLD; ULTRA-LOW POWER;

EID: 84879351856     PISSN: 1095323X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/AERO.2003.1235169     Document Type: Conference Paper
Times cited : (2)

References (10)
  • 2
    • 0030241117 scopus 로고    scopus 로고
    • D based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA
    • PII S0018920096064724
    • F. Silveira, D. Flandre and P. Jespers "A gm/Id based methodology for the design of CMOS analog circuits and its application to the synthesis of SOI micropower OTA" IEEE J. Solid-State Circuits 31, 1314-1319 (1996) (Pubitemid 126576637)
    • (1996) IEEE Journal of Solid-State Circuits , vol.31 , Issue.9 , pp. 1314-1319
    • Silveira, F.1    Flandre, D.2    Jespers, P.G.A.3
  • 3
    • 0028524336 scopus 로고
    • Micropower log-domain-filter for electronic cochlea
    • C Toumazou, J Ngarmnil and T S Lande "Micropower log-domain-filter for Electronic Cochlea" Electronics Letts, 30,1839-1841(1994)
    • (1994) Electronics Letts , vol.30 , pp. 1839-1841
    • Toumazou, C.1    Ngarmnil, J.2    Lande, T.S.3
  • 5
    • 0016028465 scopus 로고
    • Carrier mobilities at weakly inverted silicon surfaces
    • J T Chen & R S Muller "Carrier mobilities at weakly inverted silicon surfaces" J. Appl. Phys. 45, 828 (1974)
    • (1974) J. Appl. Phys , vol.45 , pp. 828
    • Chen, J.T.1    Muller, R.S.2
  • 6
    • 0035130041 scopus 로고    scopus 로고
    • The schottky junction transistor: Micropower circuits at GHz frequencies
    • T J Thornton "The Schottky Junction Transistor: Micropower Circuits at GHz Frequencies" Electron Device Letters 22, 22-40 (2001)
    • (2001) Electron Device Letters , vol.22 , pp. 22-40
    • Thornton, T.J.1
  • 7
    • 0035471662 scopus 로고    scopus 로고
    • Physics and applications of the Schottky junction transistor
    • DOI 10.1109/16.954487, PII S0018938301083757
    • T J Thornton "Physics and Applications of the Schottky Junction Transistor" IEEE Transactions on Electron Devices 48, 2421-2427 (2001) (Pubitemid 33018212)
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.10 , pp. 2421-2427
    • Thornton, T.J.1
  • 10
    • 0033226155 scopus 로고    scopus 로고
    • Extraction of the oxide charges at the silicon substrate interface in Silicon-On-Insulator MOSFET's
    • DOI 10.1016/S0038-1101(99)00178-1
    • M A Pavenello and J A Martino "Extraction of the Oxide Charges at the Silicon Substrate Interface in Silicon-on-Insulator MOSFETS" Solid State Electronics, 43, 2039-2046 (1999). (Pubitemid 30529280)
    • (1999) Solid-State Electronics , vol.43 , Issue.11 , pp. 2039-2046
    • Pavanello, M.A.1    Martino, J.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.