Activating carrier multiplication in PbSe quantum dot solids by infilling with atomic layer deposition

Journal of Physical Chemistry Letters

Volumn 4, Issue 11, 2013, Pages 1766-1770

  Ten Cate, Sybren ^a   Liu, Yao ^b   Suchand Sandeep, C S ^a   Kinge, Sachin ^c   Houtepen, Arjan J ^a   Savenije, Tom J ^a   Schins, Juleon M ^a   Law, Matt ^b   Siebbeles, Laurens D A ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Materials Research and Development   (Belgium)

Author keywords

atomic layer deposition; carrier multiplication; multiple exciton generation; quantum dot solid; third generation solar cell; time resolved microwave conductivity

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; ATOMS; EXCITONS; IV-VI SEMICONDUCTORS; LEAD COMPOUNDS; NANOCRYSTALS; PARTICLE BEAMS; SELENIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; ZINC COMPOUNDS;

CARRIER MULTIPLICATION; MULTIPLE EXCITON GENERATIONS; QUANTUM DOT SOLIDS; THIRD GENERATION; TIME-RESOLVED MICROWAVE CONDUCTIVITIES;

QUANTUM EFFICIENCY;

EID: 84879221891     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz4007492     Document Type: Article

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