Direct mapping of hot-electron relaxation and multiplication dynamics in PbSe quantum dots

Nano Letters

Volumn 12, Issue 3, 2012, Pages 1588-1591

  Miaja Avila, L ^a,b   Tritsch, J R ^a   Wolcott, A ^a,c   Chan, W L ^a   Nelson, C A ^a   Zhu, X Y ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

carrier multiplication; Hot electrons; multiexciton generation; quantum dots

Indexed keywords

CARRIER MULTIPLICATION; COMPLETE MAPPINGS; CONDUCTION-BAND MINIMUM; DIRECT MAPPING; ELECTRON POPULATION; ELECTRON RELAXATION; EXPERIMENTAL TECHNIQUES; FEMTOSECOND TIME-RESOLVED; FUNCTIONALIZED; INTERBAND; LEAD SELENIDE; LINEAR SCALING; MULTIEXCITON GENERATION; PHOTON DETECTION; PHOTON ENERGY; POTENTIAL APPLICATIONS; QUANTUM DOT; TWO-PHOTON PHOTOEMISSION;

DYNAMICS; ELECTRON TRANSITIONS; ENERGY CONVERSION; LASER PULSES; PHOTOELECTRON SPECTROSCOPY; RELAXATION OSCILLATORS; SEMICONDUCTOR QUANTUM DOTS;

HOT ELECTRONS;

LEAD; LEAD SELENIDE; QUANTUM DOT; SELENIUM DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; HEAT; MATERIALS TESTING; METHODOLOGY;

ELECTRON TRANSPORT; HOT TEMPERATURE; LEAD; MATERIALS TESTING; QUANTUM DOTS; SELENIUM COMPOUNDS;

EID: 84858268876     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204489a     Document Type: Article

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