Electronic structure and optical properties of In2X 2O7 (X = Si, Ge, Sn) from direct to indirect gap: An ab initio study

Computational Materials Science

Volumn 78, Issue , 2013, Pages 91-97

  Reshak, A H ^a,b   Khan, Saleem Ayaz ^a  

^a UNIVERSITY OF SOUTH BOHEMIA   (Czech Republic)

^b UNIVERSITY MALAYSIA PERLIS   (Malaysia)

Author keywords

Direct and indirect band gaps; Electronic structures; Optical properties

Indexed keywords

DENSITY FUNCTIONAL THEORY CALCULATIONS; ELECTRONIC AND OPTICAL PROPERTIES; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; EXCHANGE CORRELATIONS; FREQUENCY-DEPENDENT DIELECTRIC FUNCTION; FULL POTENTIAL LINEAR AUGMENTED PLANE WAVES; INDIRECT BAND GAP; REFLECTIVITY SPECTRA;

ANTIREFLECTION COATINGS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; ENERGY GAP; GERMANIUM; INDIUM; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; TIN;

SILICON;

EID: 84879209310     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2013.05.029     Document Type: Article

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