First-principles study on electronic structure, phase stability, and optical properties of In2X2O7 (X=C, Si, Ge or Sn)

Thin Solid Films

Volumn 519, Issue 19, 2011, Pages 6561-6567

  Karazhanov, S Zh ^a   Ravindran, P ^b   Grossner, U ^b  

^a INSTITUTE FOR ENERGY TECHNOLOGY   (Norway)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

Electronic structure; In2C2O7; In2Ge2O7; In2Si2O 7; In2Sn 2O7; Optical properties

Indexed keywords

BINARY OXIDES; CARRIER EFFECTIVE MASS; CHEMICAL BONDINGS; CUBIC PHASE; EFFECTIVE MASS; ELECTRONS AND HOLES; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; HIGH PRESSURE; MONOCLINIC PHASE; MONOCLINIC PHASIS; OPTICAL SPECTRA; SCIENTIFIC LITERATURE; SCINTILLATION MATERIALS; SI SOLAR CELLS; TOTAL ENERGY CALCULATION;

ANTIREFLECTION COATINGS; CALCULATIONS; CHEMICAL BONDS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GERMANIUM; INDIUM; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SILICON; STRUCTURAL PROPERTIES; TIN;

PHASE STABILITY;

EID: 79958181669     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.221     Document Type: Article

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