Dephasing of Si singlet-triplet qubits due to charge and spin defects

Applied Physics Letters

Volumn 102, Issue 23, 2013, Pages

  Culcer, Dimitrie ^a,b   Zimmerman, Neil M ^c  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACADEMIC WORK; CHARGE DIPOLE; DEPHASING RATES; MEASURABLE PARAMETERS; SI QUANTUM DOT; SINGLET-TRIPLET; SWITCHING TIME; THEORETICAL FRAMEWORK;

DIPOLE MOMENT; QUANTUM COMPUTERS; SILICON;

DEFECTS;

EID: 84879090633     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4810911     Document Type: Article

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