Understanding self-aligned planar growth of InAs nanowires

Nano Letters

Volumn 13, Issue 6, 2013, Pages 2786-2791

  Zi, Yunlong ^a   Jung, Kyooho ^a,b   Zakharov, Dmitri ^a   Yang, Chen ^a  

^a PURDUE UNIVERSITY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Gibbs Thomson equation; growth model; InAs; Planar nanowire

Indexed keywords

DEVICE APPLICATION; DEVICE FABRICATIONS; GIBBS-THOMSON EQUATIONS; GROWTH CONDITIONS; GROWTH MODELS; INAS; SEMICONDUCTING NANOWIRES; VAPOR PARTIAL PRESSURE;

VAPORS;

NANOWIRES;

EID: 84879086833     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4010332     Document Type: Article

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