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Volumn 110, Issue 22, 2013, Pages

Interfacial bonding and structure of Bi2Te3 topological insulator films on Si(111) determined by surface x-ray scattering

(9) Liu, Y a Wang, H H b,c Bian, G b Zhang, Z a Lee, S S d Fenter, P A d Tischler, J Z a Hong, H a Chiang, T C b

a ARGONNE NATIONAL LABORATORY (United States)

b United States of America (United States)

c INSTITUTE OF HIGH ENERGY PHYSICS (China)

d ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DECOUPLING; INTERFACE FORMATION; INTERFACIAL BONDING; INTERNAL STRUCTURE; RESONANT SURFACES; SI(111) SUBSTRATE; SURFACE X-RAY SCATTERING; TOPOLOGICAL INSULATORS;

BISMUTH; BUFFER LAYERS; ELECTRIC INSULATORS; SILICON; TOPOLOGY;

INTERFACES (MATERIALS);

EID: 84878401171 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.110.226103 Document Type: Article

Times cited : (14)

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