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Volumn , Issue , 2011, Pages 002787-002791

Fill factor metastabilities in CIGSe-based solar cells investigated by means of photoluminescence techniques

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER COLLECTION; CHARGE STATE; ELECTRICAL FIELD; FILL FACTOR; HIGH ENERGY PHOTONS; INTERFACE REGIONS; IV CHARACTERISTICS; LAYER MODEL; LIGHT SOAKING; METASTABILITIES; NEGATIVE CHARGE; NUMERICAL MODELING; REVERSE BIAS; SPACE CHARGE REGIONS;

EID: 84861062910     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186525     Document Type: Conference Paper
Times cited : (4)

References (13)
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  • 2
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    • Examination of blocking current-voltage behaviour through defect chalcopyrite layer in ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell
    • M. Topič, F. Smole, J. Furlan, "Examination of blocking current-voltage behaviour through defect chalcopyrite layer in ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell", Sol. Energy Mater. Sol. Cells 49, 1997, pp. 311-317.
    • (1997) Sol. Energy Mater. Sol. Cells , vol.49 , pp. 311-317
    • Topič, M.1    Smole, F.2    Furlan, J.3
  • 5
    • 84895249034 scopus 로고    scopus 로고
    • Electrical characterization of CIGSebased thin film photovoltaic devices
    • A. Romeo and A. Bossio (Eds.), Nova Science Publishers, Inc., Hauppauge, New York
    • P. Zabierowski, Electrical characterization of CIGSebased thin film photovoltaic devices, In: A. Romeo and A. Bossio (Eds.), Thin film solar cells: current status and future trends Nova Science Publishers, Inc., Hauppauge, New York., 2011, pp. 105-135.
    • (2011) Thin Film Solar Cells: Current Status and Future Trends , pp. 105-135
    • Zabierowski, P.1
  • 6
    • 40749107425 scopus 로고    scopus 로고
    • Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors
    • S. Lany, A Zunger, "Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors", Phys. Rev. Lett. 100, 2008, pp. 016401 - 016404.
    • (2008) Phys. Rev. Lett. , vol.100 , pp. 016401-016404
    • Lany, S.1    Zunger, A.2
  • 7
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    • Cu) vacancy complex
    • Cu) vacancy complex", J. Appl. Phys. 100, 2006, pp. 113725113740.
    • (2006) J. Appl. Phys. , vol.100 , pp. 113725113740
    • Lany, S.1    Zunger, A.2
  • 8
    • 0037618388 scopus 로고    scopus 로고
    • Baseline Cu(In,Ga)Se2 device production: Control and statistical significance
    • J. Kessler, M. Bodegard, J. Hedstrom, L. Stolt, "Baseline Cu(In,Ga)Se2 device production: Control and statistical significance", Sol. Energy. Mater. Sol. Cells 67, 2001, pp. 67-76.
    • (2001) Sol. Energy. Mater. Sol. Cells , vol.67 , pp. 67-76
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  • 9
    • 84861022915 scopus 로고    scopus 로고
    • Effects of CuIn0,5Ga0,5Se2 growth by isothermal and bithermal Cu- Poor/Rich/Poor sequence on solar cells properties
    • H. Marko, S. Noel, J. Kessler, "Effects of CuIn0,5Ga0,5Se2 growth by isothermal and bithermal Cu- Poor/Rich/Poor sequence on solar cells properties" MRS Spring Meeting, San Francisco CA, USA, 2009.
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  • 10
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    • Modelling polycrystalline semiconductor solar cells
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.