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Volumn 535, Issue 1, 2013, Pages 322-325
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First-principles-based analysis of the influence of Cu on CdTe electronic properties
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Author keywords
CdTe; Compensation; Computer simulation; Copper doping; First principles
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Indexed keywords
CDTE;
COPPER DOPING;
DEFECT COMPENSATION;
ELEVATED TEMPERATURE;
FIRST PRINCIPLES;
FREE CARRIER CONCENTRATION;
KINETICS OF DEFECTS;
THERMODYNAMIC MODEL;
CADMIUM TELLURIDE;
CALCULATIONS;
COMPENSATION (PERSONNEL);
COMPUTER SIMULATION;
COPPER;
DEFECTS;
ELECTRONIC PROPERTIES;
COPPER COMPOUNDS;
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EID: 84878196602
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2012.10.027 Document Type: Conference Paper |
Times cited : (47)
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References (15)
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