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Volumn 535, Issue 1, 2013, Pages 322-325

First-principles-based analysis of the influence of Cu on CdTe electronic properties

Author keywords

CdTe; Compensation; Computer simulation; Copper doping; First principles

Indexed keywords

CDTE; COPPER DOPING; DEFECT COMPENSATION; ELEVATED TEMPERATURE; FIRST PRINCIPLES; FREE CARRIER CONCENTRATION; KINETICS OF DEFECTS; THERMODYNAMIC MODEL;

EID: 84878196602     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.10.027     Document Type: Conference Paper
Times cited : (47)

References (15)
  • 6
    • 12844286241 scopus 로고
    • (ibid. 49 (1994) 14251)
    • G. Kresse, and J. Hafner Phys. Rev. B 47 1993 558 (ibid. 49 (1994) 14251)
    • (1993) Phys. Rev. B , vol.47 , pp. 558
    • Kresse, G.1    Hafner, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.