메뉴 건너뛰기




Volumn 94, Issue 10, 2010, Pages 1627-1629

P-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells

Author keywords

Acceptor; Activation energy; CdTe; Hole density; Non shallow; P Doping

Indexed keywords

ACCEPTOR ACTIVATION; ACCEPTOR LEVELS; ACCEPTOR STATE; CDS/CDTE THIN FILM SOLAR CELLS; CDTE; DEFECT COMPLEX; EXPERIMENTAL EVIDENCE; HOLE DENSITIES; P-DOPING; P-TYPE; POLYCRYSTALLINE THIN FILM; TWO EQUATION;

EID: 77955416707     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.05.006     Document Type: Article
Times cited : (26)

References (12)
  • 1
    • 9944226252 scopus 로고    scopus 로고
    • High-efficiency polycrystalline thin-film solar cells
    • Xuanzhi Wu High-efficiency polycrystalline thin-film solar cells Solar Energy 77 2004 803 814
    • (2004) Solar Energy , vol.77 , pp. 803-814
    • Wu, X.1
  • 6
    • 58949098288 scopus 로고    scopus 로고
    • Dependence of carrier lifetime on copper-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells
    • T.A. Gessert, W.K. Metzger, P. Dippo, S.E. Asher, R.G. Dhere, and M.R. Young Dependence of carrier lifetime on copper-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells Thin Solid Films 517 2009 2370 2373
    • (2009) Thin Solid Films , vol.517 , pp. 2370-2373
    • Gessert, T.A.1    Metzger, W.K.2    Dippo, P.3    Asher, S.E.4    Dhere, R.G.5    Young, M.R.6
  • 7
    • 0037109905 scopus 로고    scopus 로고
    • Chemical trends of defect formation and doping limit in IIVI semiconductors: The case of CdTe
    • Su-Huai Wei, and S.B. Zhang Chemical trends of defect formation and doping limit in IIVI semiconductors: the case of CdTe Physical Review B 66 2002 15521
    • (2002) Physical Review B , vol.66 , pp. 15521
    • Wei, S.-H.1    Zhang, S.B.2
  • 11


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.