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Thin Solid Films

Volumn 535, Issue 1, 2013, Pages 158-161

Influence of post-deposition heat treatment on electrical transport properties of In2S3-buffered Cu(In,Ga)Se2 cells

(3) Maksoud, H Abdel a Igalson, M a Spiering, S b

a WARSAW UNIVERSITY OF TECHNOLOGY (Poland)

b ZENTRUM FÜR SONNENENERGIE UND WASSERSTOFF FORSCHUNG BADEN WÜRTTEMBERG ZSW (Germany)

Author keywords

Admittance spectroscopy; Buffer; CIGS; Current transport; In2S3; Interface states; Solar cell

Indexed keywords

ADMITTANCE SPECTROSCOPIES; BUFFER; CIGS; CURRENT TRANSPORT; ELECTRICAL CHARACTERISTIC; ELECTRICAL TRANSPORT PROPERTIES; POST DEPOSITION ANNEALING; POSTDEPOSITION HEAT TREATMENT;

CAPACITANCE MEASUREMENT; CHEMICAL MODIFICATION; DEPOSITION; ELECTRIC PROPERTIES; GALLIUM; HEAT TREATMENT; INTERFACE STATES; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; SOLID STATE PHYSICS; TRANSPORT PROPERTIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84878183445 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.11.076 Document Type: Conference Paper

Times cited : (10)

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