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Volumn 517, Issue 7, 2009, Pages 2423-2426

Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements

Author keywords

Admittance spectroscopy; Cu(In,Ga)Se2; In2S3, Buffer layers; Traps levels

Indexed keywords

ACTIVATION ENERGY; BUFFER LAYERS; CADMIUM SULFIDE; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; ELECTRIC ADMITTANCE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; OPTICAL WAVEGUIDES; SOLAR CELLS; SULFUR COMPOUNDS;

EID: 59249104000     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.017     Document Type: Article
Times cited : (9)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.