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Volumn 517, Issue 7, 2009, Pages 2423-2426
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Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements
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Author keywords
Admittance spectroscopy; Cu(In,Ga)Se2; In2S3, Buffer layers; Traps levels
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Indexed keywords
ACTIVATION ENERGY;
BUFFER LAYERS;
CADMIUM SULFIDE;
CURRENT VOLTAGE CHARACTERISTICS;
DEFECTS;
ELECTRIC ADMITTANCE;
HETEROJUNCTIONS;
II-VI SEMICONDUCTORS;
OPTICAL WAVEGUIDES;
SOLAR CELLS;
SULFUR COMPOUNDS;
ADMITTANCE SPECTROSCOPIES;
COMPARATIVE STUDIES;
CU(IN , GA)SE2;
ELECTRONIC TRANSPORT PROPERTIES;
METASTABLE DEFECT;
SHUNT RESISTANCES;
SPECTRAL RESPONSE MEASUREMENTS;
TRAPS LEVELS;
INDIUM SULFIDE;
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EID: 59249104000
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.11.017 Document Type: Article |
Times cited : (9)
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References (14)
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