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Applied Physics Letters

Volumn 102, Issue 19, 2013, Pages

Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique

(5) Athanasiou, M a Kim, T K a Liu, B a Smith, R a Wang, T a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION EFFICIENCIES; MULTIPLE QUANTUM-WELL STRUCTURES; NANOSPHERE LITHOGRAPHY TECHNIQUE; PHOTOLUMINESCENCE INTENSITIES; SPONTANEOUS EMISSION RATES; TEMPERATURE DEPENDENT; TIME-RESOLVED PL MEASUREMENT; TWO DIMENSIONAL (2D) PHOTONIC CRYSTALS;

LITHOGRAPHY; NANOSPHERES; SEMICONDUCTOR QUANTUM WELLS; TWO DIMENSIONAL;

PHOTONIC CRYSTALS;

EID: 84877944273 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4805035 Document Type: Article

Times cited : (19)

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