A 125-GHz permittivity sensor with read-out circuit in a 250-nm SiGe BiCMOS technology

IEEE Transactions on Microwave Theory and Techniques

Volumn 61, Issue 5, 2013, Pages 2185-2194

  Laemmle, Benjamin ^a,b   Schmalz, Klaus ^c   Scheytt, J Christoph ^d   Weigel, Robert ^a   Kissinger, Dietmar ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b INTEL CORPORATION   (United States)

^c IHP   (Germany)

^d UNIVERSITY OF PADERBORN   (Germany)

Author keywords

BiCMOS; dielectric sensor; millimeter wave; network analyzer; reflectometer; SiGe; six port

Indexed keywords

BI-CMOS; DIELECTRIC SENSORS; PERMITTIVITY SENSORS; REFLECTION COEFFICIENT MEASUREMENT; SIGE; SIGE BICMOS TECHNOLOGY; SIGE:C BICMOS TECHNOLOGY; SIX-PORT;

BICMOS TECHNOLOGY; BINARY MIXTURES; DIELECTRIC DEVICES; ELECTRIC NETWORK ANALYZERS; LIQUIDS; MILLIMETER WAVES; PERSONAL COMPUTERS; REFLECTION; REFLECTOMETERS; SENSORS; SILICON ALLOYS; STATISTICS;

SEMICONDUCTING SILICON;

EID: 84877788595     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2013.2253792     Document Type: Article

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