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Volumn , Issue , 2013, Pages 521-526

An ultra-compact virtual source FET model for deeply-scaled devices: Parameter extraction and validation for standard cell libraries and digital circuits

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CIRCUIT APPLICATIONS; LOW-POWER DESIGN; MODEL RESULTS; NANOMETER TECHNOLOGY; RIPPLE CARRY ADDERS; SHORT-CHANNEL EFFECT; STANDARD CELL; VIRTUAL SOURCES;

EID: 84877737277     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASPDAC.2013.6509649     Document Type: Conference Paper
Times cited : (6)

References (12)
  • 1
    • 84888597198 scopus 로고    scopus 로고
    • A robust and physical BSIM3 non-quasi-static transient and ac small-signal model for circuit simulation
    • Apr
    • M. Chan, K.Y. Hui, C. Hu, and P.K. Ko. A robust and physical BSIM3 non-quasi-static transient and ac small-signal model for circuit simulation. IEEE Transactions on Electron Devices, 45(4):834-841, Apr. 1998.
    • (1998) IEEE Transactions on Electron Devices , vol.45 , Issue.4 , pp. 834-841
    • Chan, M.1    Hui, K.Y.2    Hu, C.3    Ko, P.K.4
  • 3
    • 33750600861 scopus 로고    scopus 로고
    • New generation of predictive technology model for sub-45 nm early design exploration
    • Nov
    • W. Zhao and Y. Cao. New generation of predictive technology model for sub-45 nm early design exploration. IEEE Transactions on Electron Devices, 53(11):2816-2823, Nov. 2006.
    • (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.11 , pp. 2816-2823
    • Zhao, W.1    Cao, Y.2
  • 4
    • 68349130473 scopus 로고    scopus 로고
    • A simple semiempirical short-channel MOSFET current-voltage model continuous across all regions of operation and employing only physical parameters
    • Aug
    • A. Khakifirooz, O.M. Nayfeh, and D. Antoniadis. A simple semiempirical short-channel MOSFET current-voltage model continuous across all regions of operation and employing only physical parameters. IEEE Transactions on Electron Devices, 56(8):1674-1680, Aug. 2009.
    • (2009) IEEE Transactions on Electron Devices , vol.56 , Issue.8 , pp. 1674-1680
    • Khakifirooz, A.1    Nayfeh, O.M.2    Antoniadis, D.3
  • 6
    • 84860234421 scopus 로고    scopus 로고
    • Virtual-source-based self-consistent current and charge FET models: From ballistic to drift-diffusion velocity-saturation operation
    • L. Wei, O. Mysore, and D. Antoniadis. Virtual-source-based self-consistent current and charge FET models: From ballistic to drift-diffusion velocity-saturation operation. IEEE Transactions on Electron Devices, PP(99):1-9, 2012.
    • (2012) IEEE Transactions on Electron Devices , Issue.99 , pp. 1-9
    • Wei, L.1    Mysore, O.2    Antoniadis, D.3
  • 7
    • 84855648928 scopus 로고    scopus 로고
    • An accurate ultracompact i-v model for nanometer MOS transistors with applications on digital circuits
    • Jan
    • E. Consoli, G. Giustolisi, and G. Palumbo. An accurate ultracompact i-v model for nanometer MOS transistors with applications on digital circuits. IEEE Transactions on Circuits and Systems I: Regular Papers, 59(1):159-169, Jan. 2012.
    • (2012) IEEE Transactions on Circuits and Systems I: Regular Papers , vol.59 , Issue.1 , pp. 159-169
    • Consoli, E.1    Giustolisi, G.2    Palumbo, G.3
  • 8
    • 0025415048 scopus 로고
    • Alpha-power law mosfet model and its applications to cmos inverter delay and other formulas
    • apr
    • T. Sakurai and A.R. Newton. Alpha-power law mosfet model and its applications to cmos inverter delay and other formulas. Solid-State Circuits, IEEE Journal of, 25(2):584-594, apr 1990.
    • (1990) Solid-State Circuits, IEEE Journal of , vol.25 , Issue.2 , pp. 584-594
    • Sakurai, T.1    Newton, A.R.2
  • 10
    • 0022028114 scopus 로고
    • Threshold modelling of mosfets for cad of cmos-vlsi
    • 14
    • G.T. Wright. Threshold modelling of MOSFETs for CAD of CMOS-VLSI. Electronics Letters, 21(6):223-224, 14 1985.
    • (1985) Electronics Letters , vol.21 , Issue.6 , pp. 223-224
    • Wright, G.T.1
  • 11
    • 84877754474 scopus 로고    scopus 로고
    • Bsimsoi compact mosfet model
    • Bsimsoi compact mosfet model. [online] available: http://www-device.eecs. berkeley.edu/bsim/?page=bsimsoi.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.