Silicon carbide powders: Temperature-dependent dielectric properties and enhanced microwave absorption at gigahertz range

Solid State Communications

Volumn 163, Issue , 2013, Pages 1-6

  Yang, Hui Jing ^a,b   Yuan, Jie ^c   Li, Yong ^a   Hou, Zhi Ling ^a   Jin, Hai Bo ^a   Fang, Xiao Yong ^a   Cao, Mao Sheng ^a  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b TANGSHAN NORMAL UNIVERSITY   (China)

^c MINZU UNIVERSITY OF CHINA   (China)

Author keywords

A. SiC powders; D. Conductance; D. Dielectric properties; D. Relaxation

Indexed keywords

D. RELAXATION; ELECTRICAL CONDUCTANCE; FIRST PRINCIPLE CALCULATIONS; FREQUENCY-DEPENDENT CHARACTERISTICS; INCREASING TEMPERATURES; SIC POWDER; SILICON CARBIDE POWDER; TEMPERATURE DEPENDENT;

ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; POWDERS; SILICON CARBIDE;

DIELECTRIC PROPERTIES;

EID: 84877713185     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2013.03.004     Document Type: Article

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