Characterization of intrinsic defect levels in CuInS2

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 2, 1999, Pages 511-519

  Schon J H ^a   Bucher, E ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AIR; ANNEALING; CRYSTAL GROWTH; ELECTRIC VARIABLES MEASUREMENT; EMISSION SPECTROSCOPY; PHOTOLUMINESCENCE; POINT DEFECTS; SINGLE CRYSTALS; STOICHIOMETRY; VACUUM APPLICATIONS;

CHALCOPYRITE; CHEMICAL VAPOR TRANSPORT; COPPER INDIUM SELENIDE; FORMATION ENERGY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033076223     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199902)171:2<511::AID-PSSA511>3.0.CO;2-B     Document Type: Article

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